面向生物检测的AlGaN/GaN HEMT传感芯片研究进展  

Research progress of AlGaN/GaN HEMT sensing chips for biomolecular detection

作　　者：顾智琦 李加东[2] GU Zhiqi;LI Jiadong(East China Institute of PhotoElectronic IC,Suzhou 215011,China;Suzhou Institute of NanoTech and NanoBionics,Chinese Academy of Sciences,Suzhou 215123,China)

机构地区：[1]华东光电集成器件研究所,江苏苏州215011 [2]中国科学院苏州纳米技术与纳米仿生研究所,江苏苏州215123

出　　处：《传感器与微系统》2024年第12期7-11,共5页Transducer and Microsystem Technologies

基　　金：国家自然科学基金面上项目(62074159)。

摘　　要：氮化铝镓(AlGaN)/氮化镓(GaN)高电子迁移率晶体管(HEMT)生物传感器是基于第三代半导体GaN开发的新型离子敏场效应晶体管(ISFET)生物传感器,其利用器件敏感区电荷变化调制异质结沟道中的高电子迁移率二维电子气(2DEG)来工作,与传统硅基ISFET相比,AlGaN/GaN HEMT生化传感器具有更优的化学稳定性,因此具有更大的应用范围。本文从AlGaN/GaN HEMT生物传感器的检测原理出发,讨论了AlGaN/GaN HEMT生物传感器从可行性验证、性能优化到面向实际检测的关键问题,并对AlGaN/GaN HEMT生物传感器国内外研究现状和未来发展进行了总结评价。AlGaN/GaN high eletron mobility transistor(HEMT)biosensor is a novel ion sensitive field effect transistor(ISFET)biosensor developed based on the 3rd generation semiconductor GaN.It works using modulating 2D electron gas(EG)with high electron mobility in a heterojunction channel when charge changes in the sensitive region of the device.Compared with traditional siliconbased ISFET,The AlGaN/GaN HEMT biochemical sensor has superior chemical stability,which makes it a larger application range.Based on the detection principle of AlGaN/GaN HEMT biosensor,this paper discusses the key issues of AlGaN/GaN HEMT biosensor from feasibility verification,performance optimization to practical detection,and summarizes and evaluates the research status and future development of AlGaN/GaN HEMT biosensor at home and abroad.

关 键 词：氮化铝镓/氮化镓高电子迁移率晶体管 生物传感器 离子敏场效应晶体管 二维电子气 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]