基于储能三电平变流器并联短路振荡的IGBT多参数优化策略  

Multi-Parameter Optimization Strategy for IGBT Based on Parallel Short-Circuit Oscillation of Three-Level Power Conversion System

作　　者：骆健 王红波 何鑫 郑婷婷 Luo Jian;Wang Hongbo;He Xin;Zheng Tingtinog(NARI Group(State Grid Electrical Science Institute)Co.,Ltd.,Nanjing 211106,China;Nanjing NARI Semiconductor Co.,Ltd.,Nanjing 211106,China)

机构地区：[1]南瑞集团(国网电力科学研究院)有限公司,南京211106 [2]南京南瑞半导体有限公司,南京211106

出　　处：《半导体技术》2024年第12期1051-1060,共10页Semiconductor Technology

摘　　要：随着储能变流器(PCS)功率提升,通常采用IGBT并联模式实现大电流输出,针对多功率器件并联易引起短路振荡问题,分别从振荡机理分析、仿真模拟和实验验证进行了研究。器件电容随集电极-发射极和栅极-发射极电压变化而变化,而变化的寄生电容与并联电路中的寄生电感形成谐振,从而导致短路振荡,因此抑制振荡的关键在于优化设计栅极回路,以避开系统的谐振点。基于储能多并联三电平变流器平台,通过仿真和实验进一步验证了寄生参数和器件损耗的折中优化。在损耗增幅不超过3%的基础上,将振荡幅值抑制到原来的5%以下,结果表明同步优化器件内部输入电容和米勒电容的改进方案可有效改善并联短路振荡问题。With the power increase of the power conversion(PCS),the insulated gate bipolar transistor(IGBT)parallel mode is usually used to realize high current output.In order to solve the problem of short-circuit oscillation easily caused by the parallel connection of the multi-power devices,it is investigated from the oscillation mechanism analysis,simulation and experimental verification,respectively.The capacitance of the device varies with the change of collector-emitter and gate-emitter voltages,and the changed parasitic capacitance forms the resonance with the parasitic inductance in the parallel circuit,resulting in short-circuit oscillation.Therefore,the key to suppressing the oscillation is the optimized design of the gate loop to avoid the resonance point of the system.Based on the multi-parallel three-level power converter system platform,the compromise optimization of parasitic parameters and device loss was further verified by simulation and experiment.And the oscillation amplitude is suppressed to less than 5%of the original value based on the loss increase of no more than 3%.The results show that the improved scheme of synchronous optimization of the internal input capacitance and Miller capacitance of the device can effectively improve the issue of the parallel short-circuit oscillation.

关 键 词：IGBT 储能变流器(PCS) 短路振荡 谐振 寄生参数 输入电容 米勒电容 

分 类 号：TN386.2[电子电信—物理电子学]