TaNZr薄膜换能元发火性能研究  

Ignition Performance of TaNZr Film Energy Exchanger

作　　者：任小明[1] 李蛟[1] 薛园园[1] 赵团[1] 付佩 刘卫[1] REN Xiaoming;LI Jiao;XUE Yuanyuan;ZHAO Tuan;FU Pei;LIU Wei(State Key Laboratory of Transient Chemical Effects and Control,Shaanxi Applied Physics and Chemistry Research Institute,Xi'an 710061,China)

机构地区：[1]陕西应用物理化学研究所瞬态化学效应与控制全国重点实验室,西安710061

出　　处：《装备环境工程》2024年第11期33-37,共5页Equipment Environmental Engineering

摘　　要：目的 探索Zr对TaN薄膜换能元发火性能的影响。方法 利用MEMS技术制备4种TaNZr薄膜换能元。利用SEM、能谱分析和四探针对TaNZr薄膜进行性能表征。在电容发火的条件下,获得换能元的发火性能。结果 TaNZr薄膜表面平整。TaNZr薄膜的电阻温度系数为负值。随着Zr膜比例的增大,方块电阻和TCR均不断增大。TaN_(0.6)Zr_(0.3)薄膜换能元的平均发火电压最小,为4.58V。TaN_(0.2)Zr_(0.1)的作用时间最长。结论 TaNZr薄膜换能元具有高瞬发性、发火电压低等特点,为换能元的设计提供了一种新思路。The work aims to investigate the effect of Zr on the ignition performance of TaN film energy exchanger.Four kinds of energy exchangers for TaNZr films were prepared by MEMS technology.The performance of the TaNZr films was characterized by SEM,energy spectrum analysis and four-probe measurements.Under the condition of capacitive ignition,the ignition performance of the energy exchangerwas obtained.The surface of TaNZr films was flat.The TCR of the TaNZr films was negative.Both the square resistance and TCR increased continuously with the increase of Zr.The average ignition voltage of TaN0.6Zr0.3 film was the lowest,4.58V.The action time of TaN0.2Zr0.1 was the longest.The TaNZr film energy exchanger has the characteristics of high speed generation and low ignition voltage and provides a new idea for the design of energy exchanger.

关 键 词：TaNZr MEMS SEM 电阻温度系数 性能表征 发火性能 

分 类 号：TJ450[兵器科学与技术—火炮、自动武器与弹药工程]