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作 者:王超 郝昕 姚梦麒 王江[1] 刘源 卢彦岭 谭超 王泽高 WANG Chao;HAO Xin;YAO Meng-Qi;WANG Jiang;LIU Yuan;LU Yan-Ling;TAN Chao;WANG Ze-Gao(Southwest Institute of Technical Physics,Chengdu 610041,China;College of Materials Science and Engineering,Sichuan University,Chengdu 610065,China)
机构地区:[1]西南技术物理研究所,成都610041 [2]四川大学材料科学与工程学院,成都610065
出 处:《四川大学学报(自然科学版)》2024年第6期3-8,共6页Journal of Sichuan University(Natural Science Edition)
基 金:中国兵器工业集团有限公司激光器件技术重点实验室开放基金(KLLDT202104);激光雷达与器件技术实验室开放课题(LLD2023-006)。
摘 要:二维二硫化钼(MoS_(2))自供电光电探测器具有小尺寸、低重量、低功耗(SWaP)的优势,在物联网、医疗和军事等领域有重要的应用前景.离子注入可以调控半导体材料的能带结构,是构筑自供电同质结器件的工艺之一.然而,对于纳米级厚度的MoS_(2),离子注入会损伤甚至刻蚀材料,导致MoS_(2)同质结器件构筑面临挑战.本文通过优化离子注入工艺,成功构筑MoS_(2)范德瓦尔同质结型器件,并开展自供电光电效应研究.该器件理想因子达到0.98,拥有良好的输运性质;在450 nm光照下光电响应度为11 mA/W,达到同类器件较高水平.本研究为传统成熟半导体工艺在新型二维光电探测领域的布局提供参考.Two-dimensional molybdenum disulfide(2D MoS_(2))self-powered photodetectors show significant potential in applications such as the Internet of Things,biomedical engineering,and the military,thanks to their advantages in small size,low weight,and low power consumption(SWaP).Ion implantation,a process capable of manipulating semiconductor band structures,is an effective method for constructing homojunctions that enable self-powered photoelectric effects.However,creating homojunctions in atomically thin 2D MoS₂presents challenges,as implantation can damage or even erode the crystal structure.In this work,a MoS_(2) van der Waals homojunction photodetector with self-powered optoelectronic effects was successfully fabricated by optimizing the implantation process.The photodetector achieved an ideal factor of 0.98 and demonstrated a responsivity of 11 mA/W under 450 nm light illumination,exhibiting favorable transport properties and an el⁃evated photoresponse among 2D self-powered photodetectors.This study provides valuable guidance for the application of established semiconductor processing techniques in the emerging field of 2D photodetectors.
关 键 词:自供电光电探测器 二硫化钼 离子注入 范德瓦尔同质结
分 类 号:TN362[电子电信—物理电子学]
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