二氧化硅光栅耦合增强二硫化钼1550nm红外光电效应  

Silicon dioxide grating-coupled enhancement of infrared photodetection in molybdenum disulfide at 1550 nm

作　　者：陆鼎 郝昕 罗国凌 姚梦麒 谢修敏 陈庆敏 谭超 王泽高 LU Ding;HAO Xin;LUO Guo-Ling;YAO Meng-Qi;XIE Xiu-Min;CHEN Qing-Min;TAN Chao;WANG Ze-Gao(University of Science and Technology of China,Hefei 230026,China;Southwest Institute of Technical Physics,Chengdu 610041,China;College of Materials Science and Engineering,Sichuan University,Chengdu 610065,China)

机构地区：[1]中国科学技术大学,合肥230026 [2]西南技术物理研究所,成都610041 [3]四川大学材料科学与工程学院,成都610065

出　　处：《四川大学学报（自然科学版）》2024年第6期9-16,共8页Journal of Sichuan University(Natural Science Edition)

基　　金：激光雷达与器件技术实验室开放课题(LLD2023-006)。

摘　　要：二硫化钼(MoS_(2))作为最有前景的二维半导体材料之一,在光电子器件领域具有广泛的应用前景.而多层MoS_(2)带隙宽度为1.20 eV,导致其在1033 nm以上波长的光吸收弱,影响其在更长波长范围的光电探测.介质光栅工程作为一种光学调控手段,可有效调控光的局域场强和电场分布,从而增强光与物质相互作用.本研究利用二氧化硅(SiO_(2))介质光栅工程对MoS_(2)晶体管进行调控,以探究其在1550 nm下的光电效应.研究发现,在MoS_(2)沟道区域耦合SiO_(2)介质光栅可将晶体管迟滞电压从1.68 V降至0 V;在10 mW/cm^(2)光照下,SiO_(2)光栅所形成的局域电场使器件载流子迁移率从3.52 cm^(2)/(V·s)提高至5.67 cm^(2)/(V·s);与此同时,光栅结构的耦合将MoS_(2)晶体管光响应从162 mA/W提高至263 mA/W.上述工作进一步推动了二维半导体介质光栅工程的研究和发展,并为二维材料在1033 nm以上波长光电子器件的发展提供了参考.Molybdenum disulfide(MoS_(2)),as a leading two-dimensional semiconductor,shows significant potential for optoelectronic applications.However,the bandgap of multilayer MoS_(2)is limited to 1.20 eV,which restricts its light absorption beyond 1033 nm and limits its efficacy in long-wavelength photoelectric de⁃tection.Dielectric grating engineering offers a powerful optical modulation method,enhancing local light in⁃tensity and electric field distribution to strengthen light-matter interactions.In this study,we employ silicon di⁃oxide(SiO_(2))dielectric grating engineering to regulate MoS_(2)transistors,aiming to explore their photoelectric properties at 1550 nm.Our findings reveal that integrating an SiO_(2)dielectric grating in the MoS_(2)channel re⁃gion eliminates transistor hysteresis,reducing it from 1.68 V to 0 V.Furthermore,under 10 mW/cm^(2)illumi⁃nation,the SiO_(2)grating-induced local electric field increases the carrier mobility from 3.52 cm^(2)/(V·s)to 5.67 cm^(2)/(V·s).Simultaneously,the grating structure enhances the MoS_(2)transistor's photoresponse from 162 mA/W to 263 mA/W.This work advances the development of two-dimensional semiconductor dielectric grating engineering and offers valuable insights for designing optoelectronic devices utilizing two-dimensional materials for wavelengths above 1033 nm.

关 键 词：二硫化钼 光电子器件 SiO_(2)介质光栅工程 光电效应 

分 类 号：TN362[电子电信—物理电子学]