大尺寸直拉法单晶硅生长过程中晶体缺陷的研究进展  

Research Progress of Crystal Defects During the Growth of Large Size Czochralski Monocrystalline Silicon

作　　者：周翔 李太 黄振玲 赵亮 康家铭 李绍元[1,2] 任永生 马文会[1,2] 吕国强 ZHOU Xiang;LI Tai;HUANG Zhenling;ZHAO Liang;KANG Jiaming;LI Shaoyuan;RENG Yongsheng;MA Wenhui;LYU Guoqiang(School of Metallurgy and Energy Engineering,Kunming University of Science and Technology,Kunming 650093,China;Yunnan Silicon Industry Engineering Research Center,Kunming 650093,China)

机构地区：[1]昆明理工大学冶金与能源工程学院,昆明650093 [2]云南省硅工业工程研究中心,昆明650093

出　　处：《材料导报》2024年第24期11-19,共9页Materials Reports

基　　金：云南省重点研发项目(202002AB080030,202103AA080003);云南省科技重大专项(202102AB080016,202202AG050012);云南省科技计划项目(202302AD080008)。

摘　　要：太阳能光伏发电的碳排放量仅占化石能源发电的1/20~1/10,是实现“双碳”目标的必然选择和有效途径。随着光伏装机规模的持续增加和太阳能电池效率的不断提高,相关行业对单晶硅片向着低成本、大尺寸、高品质的发展提出了更高的要求。然而,硅片的大尺寸化带来的传热传质不均以及晶体缺陷等问题是影响硅片电学性能的重要因素。本综述对直拉法单晶硅生长过程中缺陷的种类、生长机理以及氮、磷、硼、碳掺杂元素对缺陷的形成与影响的研究现状进行了归纳总结,分析研究了硅中间隙原子、空位以及硅晶格应力的相互影响,并对大尺寸直拉法单晶硅生长过程中晶体缺陷控制技术的发展方向进行了展望。Thecarbon emissions of solar photovoltaic power generation account for only 1/20 to 1/10 of traditional fossil energy power generation,which is an inevitable choice and effective way to achieve the carbon peaking and carbon neutrality goals.With the continuous increase of photovoltaic installed capacity and the continuous improvement of solar cell efficiency,photovoltaic and other related industries have put forward higher requirements for the development of monocrystalline silicon wafers towards low cost,large size and high quality.However,the uneven heat and mass transfer and crystal defects caused by the large size of silicon wafers are important factors affecting the electrical properties of silicon wafers.This paper inducts the types and growth mechanism of defects in the growth process of Czochralski single crystal silicon,and summarizes the research status of the formation and influence of nitrogen,phosphorus,boron and carbon doping elements on defects.The interaction of interstitial atoms,vacancies and lattice stress in silicon is studied,and the development direction of crystal defect control technology in the growth process of large-size Czochralski single crystal silicon is prospected.

关 键 词：单晶硅 点缺陷 氧沉淀 氮 磷 硼 碳 

分 类 号：O77+1[理学—晶体学] O77+5O77+9