薄界面异质异构晶圆键合技术研究现状及趋势  

Research Status and Trends of Ultra-thin Interface Heterogeneous Wafer Bonding Technology

作　　者：王成君 杨晓东 张辉[1] 周幸叶 戴家赟 李早阳[5] 段晋胜 乔丽 王广来 WANG Chengjun;YANG Xiaodong;ZHANG Hui;ZHOU Xingye;DAI Jiayun;LI Zaoyang;DUAN Jinsheng;QIAO Li;WANG Guanglai(School of Mechanical Engineering,Southeast University,Nanjing 211189,China;The 2nd Research Institute of China Electronics Technology Group Corporation,Taiyuan 030024,China;The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China;The 55th Research Institute of China Electronics Technology Group Corporation,Nanjing 210000,China;School of Energy and Power Engineering,Xi’an Jiaotong University,Xi’an 710049,China;School of Mechanical and Electrical Engineering,Guilin University of Electronic Science and Technology,Guilin 541004,Guangxi,China)

机构地区：[1]东南大学机械工程学院,南京211189 [2]中国电子科技集团公司第二研究所,太原030024 [3]中国电子科技集团公司第十三研究所,石家庄050051 [4]中国电子科技集团公司第五十五研究所,南京210000 [5]西安交通大学能源与动力工程学院,西安710049 [6]桂林电子科技大学机电工程学院,广西桂林541004

出　　处：《材料导报》2024年第24期36-49,共14页Materials Reports

基　　金：国家重点研发计划(2022YFB3404300);科工局基础科研项目(JCKY2019210A002)。

摘　　要：半导体产业对国防安全和国民经济发展意义重大,高端半导体装备也是国外对华技术封锁的重点领域。雷达探测、5G通信等领域所用的导体器件对大功率、高频率、高响应等性能要求越来越高,目前该类器件面临界面热阻高、传输损耗大和集成度低等技术瓶颈。开展超薄界面异质异构晶圆键合装备研发,大幅度降低键合界面热阻、提高互连密度和键合精度,是解决当前技术瓶颈、提高器件性能的重要途径。但由于核心零部件被国外垄断、设备整机技术攻关难度大,目前尚无成熟的国产异质异构晶圆键合装备,这就严重制约了我国新一代半导体器件的自主创新发展。本文梳理了超薄界面异质异构晶圆键合技术及典型工艺研究现状,并展望了超薄界面异质异构晶圆键合技术发展趋势。The semiconductor industry plays a significance role in national defense security and the economic development of a nation.Advanced semiconductor equipment is the key field for foreign technological restrictions on China.Semiconductor devices used in fields such as radar detection and 5G communication have increasingly high performance requirements for high-power,high-frequency,and high response.Currently,these devices face technical bottlenecks such as high interface thermal resistance,high transmission loss,and low integration.Developing ultra-thin interface heterogeneous wafer bonding equipment to significantly reduce bonding interface thermal resistance and improve interconnect bon-ding accuracy is an important way to solve existing technological bottlenecks and improve device performance.However,due to the foreign monopoly of core components and the difficulty of tackling key equipment technologies,there is currently no mature domestic heterogeneous wafer bonding equipment,which seriously restricts the independent innovation and development of China’s new generation semiconductor devices.This paper summarizes the current research status of ultra-thin interface heterogeneous wafer bonding technology and typical processes,and prospectes the development trend of ultra-thin interface heterogeneous wafer bonding technology.

关 键 词：晶圆键合 超薄界面 异质异构 直接键合 金刚石基氮化镓微波功率器件 

分 类 号：TH122[机械工程—机械设计及理论]