碳化硅离子注入机控制系统优化设计  

Optimization Design of Control System for SiC Ion Implanter

作　　者：盛飞龙 伍三忠 梁启恒 仇礼钦 孔倩茵 SHENG Fei-long;WU San-zhong;LIANG Qi-heng;QIU Li-qin;KONG Qian-yin(JI HUA Laboratory)

机构地区：[1]季华实验室

出　　处：《中国集成电路》2024年第11期87-91,共5页China lntegrated Circuit

摘　　要：为对碳化硅离子注入机控制系统进行优化提升,从离子注入机的原理开始,描述了离子注入机的基本结构组成,并对控制系统的架构设计进行了一定的分析和阐述;接下来详细介绍了碳化硅离子注入机控制系统几个重要部件优化设计,包括加热优化设计、稳束优化设计、寻边优化设计,能有效提高加热效率和精度、束流稳定性、传片效率,使得碳化硅离子注入机整体性能达到了行业先进水平。In order to optimize and improve the control system of SiC ion implanter,starting from the principle of ion implantater,the basic structural composition of ion implantater is described,and the architecture design of the control system is analyzed and elaborated;Next,we will provide a detailed introduction to the optimization design of several important components in the control system of the SiC ion implantater,including heating optimization design,beam stabilization optimization design,and edge finding optimization design.These components can effectively improve heating efficiency and accuracy,beam stability,and transfer efficiency,making the overall performance of the SiC ion implantater reach an advanced level in the industry.

关 键 词：离子注入机 控制系统 碳化硅 部件 优化设计 

分 类 号：TP273[自动化与计算机技术—检测技术与自动化装置]