Resistive Switching of BN-based Films Accompanied with the Modulation of Ferromagnetism  

BN基薄膜的电致阻变效应及其对磁性的调控

作　　者：FAN Huan SHI Yana LI Jiale ZHAO Juanjuan LI Xiaoli 范欢;石亚娜;李佳乐;赵娟娟;李小丽(磁性分子与磁信息材料教育部重点实验室,太原030000;山西师范大学化学与材料科学学院,太原030000;山西师范大学材料科学研究院,太原030000)

机构地区：[1]Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education,Taiyuan 030000,China [2]School of Chemistry and Materials Science,Shanxi Normal University,Taiyuan 030000,China [3]Research Institute of Materials Science,Shanxi Normal University,Taiyuan 030000,China

出　　处：《材料导报》2024年第S02期63-66,共4页Materials Reports

基　　金：山西省自然科学基金(201901D111282);山西省高等学校教学改革创新项目(J20220481);山西师范大学研究生课程思政示范课程(2023YJSKCSZSFK-01);山西省研究生课程思政示范课程(2024SZ19)。

摘　　要：Nanostructured BN and BN-Co films with Cu,Co,Au as the top electrodes,and Pt as the bottom electrodes were grown by magnetron sputtering.Both BN samples and BN-Co ones show bipolar resistive switching behaviors.For the sample with active Cu as the top electrode,the formation and rupture of metallic Cu conductive filaments can explain the resistive switching behavior;for the other samples,the generation and annihilation of nitrogen vacancies under the electric stimuli may contribute to the occurrence of resistive switching.Taking advantage of the formed and broken Co-N bonds during resistive switching,the saturation magnetization of the BN-Co films can be modulated.Thus,it investigated the resistive switching behavior of BN and BN-Co materials in this work.Similar to that of oxide materials,the resistive switching behaviors of the nitrides may be attributed to the movement of cations or anions within the dielectric or electrodes during the application of voltage.Additionally,ion migration may lead to the formation or breaking of Co-N bonds,which can effectively regulate the magnetism of BN-Co materials.This study extends resistive switching materials to nitrides,enabling the regulation of magnetism along with resistance changes,thus providing insights for the design of novel voltage-controlled magnetic devices and achieving multi-functionality.本工作采用磁控溅射方法制备了以铜、钴、金作为顶电极,铂作为底电极的纳米结构氮化硼(BN)和氮化硼-钴(BN-Co)薄膜,研究了BN和BN-Co样品的电致阻变性质。结果表明,所有样品均表现双极性电致阻变行为。活泼金属铜作为顶电极样品的电致阻变行为可能归因于铜导电丝的形成和熔断;其他样品的电致阻变行为可能与施加电压过程中氮离子迁移导致的氮空位缺陷的形成和湮灭有关。值得一提的是,在对BN-Co基样品施加电压的过程中,氮离子迁移引起样品电致阻变的同时也可能导致Co-N键的形成和断裂,从而在一定程度上调控样品的饱和磁化强度。总之,本工作研究了BN和BN-Co材料的电致阻变行为。和氧化物材料类似的是,氮化物的电致阻变行为可能归功于施加电压过程中介质或电极中阳离子或阴离子的运动。不仅如此,离子的迁移可能导致Co-N键的形成或断裂,从而可以有效调控BN-Co材料的磁性。本工作将电致阻变的介质材料拓展到氮化物,在电阻改变的同时还能调控磁性,从而可以为设计新型电控磁性器件、实现多功能性提供线索。

关 键 词：BN-based thin film magnetron sputtering resistive switching saturation magnetization 

分 类 号：O47[理学—半导体物理]