Achieving high power factor in GaSb with intrinsically high mobility via Ge doping  

作　　者：Yan-Ci Yan Guo-Wei Wang Qi-Hong Xiong Xu Lu Peng Chen Wei Zou Deng-Feng Li Hong Wu Yun Zhou Xiao-Yuan Zhou 

机构地区：[1]School of Science,Chongqing University of Posts and Telecommunications,Chongqing 400065,China [2]College of Physics,Chongqing University,Chongqing 401331,China [3]College of Ocean Science and Engineering,Shanghai Maritime University,Shanghai 201306,China

出　　处：《Rare Metals》2024年第10期5435-5441,共7页稀有金属（英文版）

基　　金：financially supported by the National Natural Science Foundation of China(Nos.12004060 and 12204080);the Natural Science Foundation of Chongqing(No.CSTB2022NSCQ-MSX0382);the Scientific and Technological Research Program of Chongqing Municipal Education Commission(Nos.KJQN202000635 and KJQN 202200623)。

摘　　要：The thermoelectric power factor is as crucial as their overall thermoelectric performance.GaSb-based compounds are deemed to achieve high power factor owing to their intrinsically high mobility compared to classical thermoelectric materials.However,the carrier concentration of pristine GaSb is considerably lower than the optimum value,which hinders its ability to attain high electrical performance.In this paper,we present the investigations on the thermoelectric performance of p-type GaSb_(1-x)Ge_(x)samples.The experimental results reveal that Ge doping can effectively tune the carrier concentration.

关 键 词：POWER GASB MOBILITY 

分 类 号：TB34[一般工业技术—材料科学与工程]