Deep localization features of photoluminescence in narrow AlGaN quantum wells  

作　　者：DENG Jianyang LI Rui GUO Ya'nan WANG Junxi WANG Chengxin JI Ziwu 

机构地区：[1]School of Integrated Circuits, Institute of Novel Semiconductors, Shandong University,Jinan 250100,China [2]Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences,Bejing 100083,China [3]Shandong Inspur Huaguang Optoelectronics Co., Ltd.,Weifang 261061,China

出　　处：《Optoelectronics Letters》2024年第12期736-740,共5页光电子快报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.62135013,62274163 and 52272157);the Wuxi Innovation and Entrepreneurship Fund“Taihu Light”Science and Technology(Fundamental Research)Project(No.K20231002)。

摘　　要：The research prepared two deep ultraviolet(DUV)AlGaN-based multiple quantum well(MQW)samples with the same Al content in the QWs but different well widths(3 nm for Sample A and 2 nm for Sample B).Photoluminescence(PL)measurements reveal that Sample A exhibits only one main PL peak across all measured temperatures,while Sample B displays one main PL peak at low temperatures and two distinct PL peaks at high temperatures.Furthermore,compared with Sample A,Sample B exhibits a more significant temperature-dependent PL peak wavelength blue shift relative to the Varshni curve,a more significant excitation power density-dependent PL peak blue shift accompanied by linewidth broadening,as well as a larger non-radiative recombination related activation energy and higher internal quantum efficiency(IQE).These findings can be explained by the observation that the narrower well width of Sample B induces a more pronounced effect of carrier localization than the wider well width of Sample A,due to the enhanced fluctuation in well width and reduced quantum-confined Stark effect(QCSE).

关 键 词：ALGAN QUANTUM NARROW 

分 类 号：TN312.8[电子电信—物理电子学]