具有低反向恢复电流峰值的全桥驱动电路  

Full-Bridge Driver Circuit with Low Reverse Recovery Current Peaks

作　　者：张帆 ZHANG Fan

机构地区：[1]西安导航技术研究所,西安710068

出　　处：《现代导航》2024年第6期438-445,共8页Modern Navigation

摘　　要：H桥驱动感性负载时,负载电流方向的改变会带来dv/dt噪声,从而使得桥臂上功率管的输出电流带有尖峰,恶化电路的电磁干扰(EMI)特性。为进一步降低功率管启动过程中的di/dt噪声和功率管启动中的电流峰值,在阐述了功率管弥勒平台及H桥开关特性的基础上,提出了一种可快速启动且具有低反向恢复电流峰值的全桥驱动电路。最后基于0.18μm BCD工艺进行仿真,在10~40 V的电源范围、2.5 A的最大工作电流的条件下,所设计电路具有300 ns的快速启动时间和452 mA的低功率管反向恢复电流的峰值。When H Bridge has inductive loads,as a result of the dv/dt noise coming up with the change of load current direction,the output current of power Metal Oxide Semiconductor(MOS)Field Effect Transistor(MOSFET)has a sharp peak,which worsens the Electro Magnetic Interference(EMI)characteristics of the circuit.In order to further reduce the di/dt noise and current peak during power MOSFETs start-up,a full-bridge drive circuit with fast start-up and low reverse recovery current peak is proposed after expounding the characteristics of the power MOSFET Miller platrau and characteristics of the H-bridge switch.Finally,based on the 0.18μm Bipolar-CMOS-DMOS process,the designed circuit has a fast start-up time of 300 ns and the reverse recovery current peak value of 452 mA with the condition of a power supply range of 10~40 V and a maximum operating current of 2.5 A.

关 键 词：H桥 DI/DT 全桥驱动 反向恢复电流 

分 类 号：TN86[电子电信—信息与通信工程]