Dy_(2)O_(3)掺杂抗还原纳米BaTiO_(3)基陶瓷性能研究  

Characteristics of Dy_(2)O_(3)-doped non-reducible nano BaTiO_(3)-based ceramics

作　　者：罗世勇 赵俊斌 蓝小林 周沫轲 唐斌[3] LUO Shiyong;ZHAO Junbin;LAN Xiaolin;ZHOU Moke;TANG Bin(Guangdong Southern Hongming Electronic Technology Co.,Dongguan523216,Guangdong Province,China;Key Laboratory of High-Performance Scientific Computation,Xihua University,Chengdu610039,China;School of Integrated Circuit Science and Engineering,University of Electronic Science and Technology of China,Chengdu611731,China)

机构地区：[1]广东南方宏明电子科技股份有限公司,广东东莞523216 [2]西华大学高性能科学计算重点实验室,四川成都610039 [3]电子科技大学集成电路科学与工程学院,四川成都611731

出　　处：《电子元件与材料》2024年第10期1221-1226,共6页Electronic Components And Materials

基　　金：广东省促进经济高质量发展专项基金(粤工信电子函[2020]218号)。

摘　　要：采用传统固相合成法制备了BaTiO_(3)-SrCO_(3)-MgCO_(3)-Mn_(3)O_(4-x)Dy_(2)O_(3)-ZrO_(2)-SiO_(2)陶瓷,其中x的取值范围为摩尔分数0~0.8%。该系列陶瓷以1320℃的温度在1%H_(2)+99%N_(2)混合还原气氛中烧结。系统研究了Dy_(2)O_(3)掺杂对纳米BaTiO_(3)基陶瓷的晶格变化、晶粒生长和介电性能的影响。结果表明,掺杂适量的Dy_(2)O_(3)有助于提升BaTiO_(3)陶瓷材料的介电常数、绝缘电阻率以及T_(c)峰值。最终,掺杂摩尔分数0.2%Dy_(2)O_(3)的BaTiO_(3)陶瓷样品表现出了高介电常数(ε_(r)=2914)、良好的绝缘电阻率(ρ_(v)=1.94×10^(11)Ω·cm)和低介质损耗(tanδ=0.7%),且其温度特性符合EIA X7R标准(-55~125℃,ΔC/C_(25℃)≤±15%),表现出作为纳米BaTiO_(3)基电容器陶瓷材料的良好应用潜力。BaTiO_(3)-SrCO_(3)-MgCO_(3)-Mn_(3)O_(4-x)Dy_(2)O_(3)-ZrO_(2)-SiO_(2)ceramics were prepared by traditional solid phase synthesis method,where the value of x ranges from 0 to 0.8%(mole fraction).This series of ceramics was sintered at 1320℃in the 1%H_(2)+99%N_(2)mixed reducing atmosphere.The effect of Dy_(2)O_(3)doping on the lattice change,grain growth and dielectric properties of nano-BaTiO_(3)-based ceramics was systematically studied.The results show that doping with an appropriate amount of Dy_(2)O_(3)helps to improve the dielectric constant,insulation resistivity and T_(c) peak of BaTiO_(3)ceramic materials.Finally,the BaTiO_(3)ceramic sample doped with 0.2%Dy_(2)O_(3)exhibits a high dielectric constant(ε_(r)=2914),good insulation resistivity(ρ_(v)=1.94×10^(11)Ω·cm)and low dielectric loss(tanδ=0.7%),and its temperature characteristics meets the EIA X7R standard(-55-125℃,ΔC/C_(25℃)≤±15%),showing good application potential as a nano-BaTiO_(3)-based capacitor ceramic material.

关 键 词：纳米钛酸钡 抗还原 Dy_(2)O_(3) 高介电常数 温度稳定性 

分 类 号：TM53[电气工程—电器]