低浓度CeO_(2)/SiO_(2)复合磨料对硅片CMP性能的影响  

Influence of low concentration CeO_(2)/SiO_(2) composite abrasive on the CMP performance of silicon wafers

作　　者：刘文博 王辰伟 罗翀 岳泽昊 王雪洁 邵祥清 李瑾 LIU Wenbo;WANG Chenwei;LOU Chong;YUE Zehao;WANG Xuejie;SHAO Xiangqing;LI Jin(School of Electronic and Information Engineering,Hebei University of Technology,Tianjin300130,China;Tianjin Key Laboratory of Electronic Materials and Devices,Tianjin300130,China;Semiconductor Technology Innovation Center(Beijing)Corporation,Beijing100176,China)

机构地区：[1]河北工业大学电子信息工程学院,天津300130 [2]天津市电子材料与器件重点实验室,天津300130 [3]北方集成电路技术创新中心(北京)有限公司,北京100176

出　　处：《电子元件与材料》2024年第10期1227-1234,共8页Electronic Components And Materials

基　　金：河北省自然科学基金(E2019202367)。

摘　　要：为了在硅衬底化学机械平坦化(CMP)过程中提高对硅衬底的去除速率,同时获得良好的表面质量,选用了CeO_(2)包覆SiO_(2)的壳核结构复合磨料,研究其在低浓度下对硅衬底去除速率和表面质量的影响。采用扫描电子显微镜(SEM)、光电子能谱(XPS)对CeO_(2)/SiO_(2)复合磨料样品的结构、形貌进行了表征,表明其具有完整包覆的壳核结构。BET比表面积和摩擦系数测试显示,在相似粒径下CeO_(2)/SiO_(2)复合磨料比SiO_(2)磨料拥有更大的比表面积和摩擦系数,从而提高了对硅片的化学反应和机械磨削作用。实验表明,当采用质量分数0.5%的CeO_(2)/SiO_(2)复合磨料(粒径75nm)对硅衬底抛光后,其去除速率可达到530nm/min,硅衬底表面粗糙度为0.361nm。因此,相对于传统SiO_(2)磨料,采用CeO_(2)/SiO_(2)复合磨料抛光可以在低浓度条件下同时具备高去除速率和良好的表面质量。In order to improve the removal rate and maintain good surface quality during chemical mechanical planarization(CMP)of silicon substrate,CeO_(2) coated SiO_(2) shell-core composite abrasive was selected and its effect on the removal rate and surface quality of silicon substrate at low concentration was investigated.The chemical composition and morphology of CeO_(2)/SiO_(2) composite abrasive samples were characterized by scanning electron microscopy(SEM)and X-ray photoelectron spectroscopy(XPS),and a completely coated shell-core structure was confirmed.The BET specific surface area and friction coefficient tests showed that the CeO_(2)/SiO_(2) composite abrasive has a larger specific surface area and friction coefficient than the SiO_(2) abrasive under similar particle size,thus the chemical reaction and mechanical grinding of silicon wafers surface were improved.The results show that when the mass fraction of 0.5%CeO_(2)/SiO_(2) composite abrasive(particle size 75nm)is used to polish the silicon substrate,the removal rate can reach 530nm/min.The surface quality of wafer after polishing was characterized by AFM,and the surface roughness of silicon substrate is 0.361nm.Therefore,compared with traditional SiO_(2) abrasives,CeO_(2)/SiO_(2) composite abrasives can provide high removal rate and good surface quality at the same time under low concentration.

关 键 词：化学机械抛光(CMP) CeO_(2)/SiO_(2)复合磨料 硅 去除速率 表面质量 

分 类 号：TN305.2[电子电信—物理电子学]