一种高增益纵向PNP晶体管器件设计  

Novel High-gain Single Polycrystalline Vertical PNP Transistor Devices

作　　者：欧宏旗 龙翠平 朱梦蝶 陆泽灼 张羽翔 安宁 梁康弟 龚榜华 裴颖 税国华 刘建 张扬波 刘青 OU Hongqi;LONG Cuiping;ZHU Mengdie;LU Zezhuo;ZHANG Yuxiang;AN Ning;LIANG Kangdi;GONG Banghua;PEI Ying;SHUI guohua;LIU jian;ZHANG Yangbo;LIU Qin(Chongqing Semi-chip Electronics Co.,Ltd.,Chongqing 401332,P.R.China)

机构地区：[1]重庆中科渝芯电子有限公司,重庆401332

出　　处：《微电子学》2024年第4期547-550,共4页Microelectronics

摘　　要：兼顾纵向PNP晶体管高电流增益和高击穿特性,设计了一种基于绝缘体上硅(SOI)全介质隔离的P外延互补双极工艺,通过优化纵向PNP晶体管的基区掺杂浓度和有效基区宽度,获得一种高电流增益的纵向PNP晶体管,器件增益β≥500,耐压大于等于30 V。Considering the high current gain and high breakdown effect of vertical PNP transistors,a P-epitaxial complementary bipolar process based on the full dielectric isolation of silicon on an insulator was designed.By optimizing the base doping concentration and effective based width of the vertical PNP transistor,a high current gain vertical PNP transistor was obtained withβ≥500 and V CE≥30 V.

关 键 词：P外延 高电流增益 多晶硅发射极 纵向PNP 

分 类 号：TN322.8[电子电信—物理电子学]