新型集成隐埋齐纳二极管的研制及稳定性研究  

Development and Stability of a New Integrated Buried Zener Diode

作　　者：路婉婷 阚玲 刘青 杨赉 刘娇 张新宇 李永林 孔相鳗 龚榜华 谢迪 LU Wanting;KAN Ling;LIU Qing;YANG Lai;LIU Jiao;ZHANG Xinyu;LI Yonglin;KONG Xiangman;GONG Banghua;XIE Di(Chongqing Semi-chip Electronics Co.,Ltd.,Chongqing 401332,P.R.China)

机构地区：[1]重庆中科渝芯电子有限公司,重庆401332

出　　处：《微电子学》2024年第4期551-557,共7页Microelectronics

摘　　要：介绍了一种采用40 V高压双极工艺制作的新型集成隐埋齐纳二极管的稳定性研究。这种新型隐埋齐纳二极管击穿电压值可调,齐纳击穿区避开表面,隐埋在硅体内,且内阻小、噪声低。首先分析了40 V高压双极工艺现有的次表面集成齐纳二极管长期稳定性和热稳定性不足的原因,接着介绍了新型集成隐埋齐纳二级管的工作机理。对新型集成隐埋齐纳二极管开展了老化试验,通过分析试验数据验证了新型集成隐埋齐纳管结构的有效性。This study introduces a new type of integrated buried Zener diode,fabricated via a 40-V high-voltage bipolar process,and investigates its stability.The new diode is characterized by an adjustable breakdown voltage.Further,the Zener breakdown region is buried in the silicon body,thereby avoiding the surface.Moreover,the diode has a low internal resistance and low noise.The study first analyzes the reasons behind the insufficient long-term and thermal stabilities of existing subsurface integrated Zener diodes in the 40-V high-voltage bipolar process.Subsequently,the working mechanism of the new integrated buried Zener diode is introduced.Aging tests were performed on the new diode,and the effectiveness of its structure was verified by analyzing the test data.

关 键 词：集成隐埋齐纳二极管 稳定性 反向击穿 电压温度系数 高压双极工艺 

分 类 号：TN432[电子电信—微电子学与固体电子学]