基于选区外延法的单片异质集成GaN/Si的研究  

Monolithic Heterogeneous Integration of GaN and Si via a Selective Epitaxy Method

作　　者：程骏骥 戚翔宇 王思亮 王鹏[3] 黄伟[3] 胡强 杨洪强[1] CHENG Junji;QI Xiangyu;WANG Siliang;WANG Peng;HUANG Wei;HU Qiang;YANG Hongqiang(University of Electronic Science and Technology of China,Chengdu 611731,P.R.China;Chengdu Semi-Future Technology Co.,Ltd.,Chengdu 610094,P.R.China;Fudan University,Shanghai 200433,P.R.China)

机构地区：[1]电子科技大学,成都611731 [2]成都森未科技有限公司,成都610094 [3]复旦大学,上海200433

出　　处：《微电子学》2024年第4期558-563,共6页Microelectronics

基　　金：中国博士后科学基金(2020M683286)。

摘　　要：将GaN器件与Si集成电路进行单片异质集成是当前微电子领域的前沿研究方向之一,而直接从材料定义系统的选区外延法是其中最具潜力的技术途径。针对选区外延法的实施过程中,选区外延GaN的高温过程会严重影响已制Si集成电路功能的问题,提出一种MOSFET沟道热扩裕量预留技术,并通过理论分析和仿真实验验证了该技术的可行性与有效性。研究结果克服了选区外延法的固有缺陷,能够在实现GaN/Si单片异质集成的同时,保障Si集成电路的功能,为单片异质集成GaN/Si技术的发展提供了有益新思路。Currently,the monolithic heterogeneous integration of GaN devices with Si integrated circuits(ICs)is one of the cutting-edge research directions in the field of microelectronics.The selective epitaxy method,which defines a system directly from a material,is one of the most promising technological pathways for monolithic heterogeneous integration.However,the high-temperature process of selective epitaxy for GaN seriously affects the performance of Si ICs.To address this issue,a thermal-diffusion-margin-reservation(TDMR)technique is proposed for designing MOSFET channels.The feasibility and validity of the TDMR technique were verified through theoretical analyses and simulations.The results indicate that the proposed technique overcomes the inherent defects of the selective epitaxial method,facilitating the realization of GaN/Si monolithic heterogeneous integration while guaranteeing Si IC functionality.This study provides useful insights for GaN/Si monolithic heterogeneous integration.

关 键 词：GaN/Si单片异质集成 选区外延 热扩裕量预留技术 

分 类 号：TN405[电子电信—微电子学与固体电子学]