一种650 V微沟槽IGBT设计与优化  

Design and Optimization of a 650 V Micro-pattern Trench IGBT

作　　者：陈冠谋 冯全源[1] 陈晓培 CHEN Guanmou;FENG Quanyuan;CHEN Xiaopei(Institute of Microelectronics,Southwest Jiaotong University,Chengdu 611756,P.R.China;School of Electronic Engineering,Chengdu Technological University,Chengdu 611730,P.R.China)

机构地区：[1]西南交通大学微电子研究所,成都611756 [2]成都工业学院电子工程学院,成都611730

出　　处：《微电子学》2024年第4期659-664,共6页Microelectronics

基　　金：国家自然科学基金(62090012);四川省重点研发项目(2023YFG0004)。

摘　　要：介绍了关于IGBT的注入增强原理,以及使用Sentaurus TCAD软件对不同Mesa宽度以及不同沟槽栅长度的器件进行了仿真优化。根据仿真结果以及第三代FS Trench设计平台,设计了一款650 V MPT-IGBT(Micro-Pattern Trench IGBT)。根据流片样品的测试结果表明,相比于传统的元胞节距(pitch)为4.5μm IGBT,本文的器件可以在降低39%正向压降的同时,关断损耗降低50.6%,实现相对于传统IGBT性能的提升。且该器件结构完全兼容现有的制造工艺,不需要额外进行制造工艺的研发。In this study,the injection enhancement principle of IGBT is investigated and a device with different Mesa widths and trench gate lengths is simulated and optimized via Sentaurus TCAD.Based on the simulation and third-generation FS design platform,a 650 V micro-pattern trench IGBT(MPT-IGBT)was designed and taped out.The testing results indicate that compared with the traditional IGBT with a 4.5μm cell pitch,the forward voltage drop and turn-off losses of the MPT-IGBT samples reduced by 39%and 50.6%,respectively.Moreover,the existing microelectronic processes fully satisfy the manufacture of the MPT-IGBT without requiring additional processes to be investigated.

关 键 词：IGBT 微沟槽绝缘栅二极管 沟槽栅 关断损耗 注入增强 

分 类 号：TN432[电子电信—微电子学与固体电子学]