基于SiC MOSFET的抗辐射电源性能研究  

Performance of Anti-radiation Power Supply Based on SiC MOSFETs

作　　者：崔庆林[1] 明元 张民明 罗远杰 CUI Qinglin;MING Yuan;ZHANG Mingmin;LUO Yuanjie(Sichuan Institute of Solid-State Circuits,China Electronics Technology Group Corp.,Chongqing 400060,P.R.China)

机构地区：[1]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《微电子学》2024年第4期692-698,共7页Microelectronics

基　　金：重庆市科技创新重大研发项目(2024TIAD-STX0009)。

摘　　要：随着我国航天事业的蓬勃发展,以SiC等为代表的宽禁带导体的抗辐射能力成为当前国内外研究的热点。目前的大部分针对器件级单粒子烧毁、漏电流增加、阈值电压漂移等的研究和试验均在施加静态偏置条件下开展。本文首先针对SiC MOSFET开展器件级辐照效应研究,分析其单粒子辐照安全工作区间。在此基础上,本文进一步设计了抗辐射电源电路作为试验载体,验证SiC MOSFET在电源实际工况下的电、热、抗辐射性能。The radiation resistance of third-generation SiC semiconductors has become a hot research topic both in China and internationally,owing to the vigorous development of the aerospace industry.Currently research and experiments predominantly focus on device level single event burnout,increased leakage current,and threshold voltage drift,under static bias conditions.Research on the device level irradiation effects on SiC MOSFETs was conducted to obtain the safe operating range for single particle irradiation.Based on this,an anti-radiation power supply was designed and used to verify the electrical,thermal,and anti-radiation performance of SiC MOSFETs.

关 键 词：宽禁带半导体 SIC 辐射效应 单粒子辐射 抗辐射电源 

分 类 号：TN432[电子电信—微电子学与固体电子学]