Low-resistance Ohmic contact for GaN-based laser diodes  

作　　者：Junfei Wang Junhui Hu Chaowen Guan Songke Fang Zhichong Wang Guobin Wang Ke Xu Tengbo Lv Xiaoli Wang Jianyang Shi Ziwei Li Junwen Zhang Nan Chi Chao Shen 

机构地区：[1]Key Laboratory for Information Science of Electromagnetic Waves(MoE),School of Information Science and Technology,Fudan University,Shanghai 200438,China [2]Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China [3]School of Microelectronics,Xi’an Jiaotong University,Xi’an 710049,China

出　　处：《Journal of Semiconductors》2024年第12期145-150,共6页半导体学报（英文版）

基　　金：funded by the Natural Science Foundation of China Project,grant number 62274042;Natural Science Foundation of Shanghai,grant number 21ZR1406200;the Key Research and Development Program of Jiangsu Province,grant number BE2021008-5.

摘　　要：Low-resistance Ohmic contact is critical for the high efficiency GaN-based laser diodes.This study investigates the introduction of the In_(0.15)Ga_(0.85)N contact layer on the specific contact resistance.Experimental results reveal that adopting the In0.15Ga0.85N contact layer yields a minimized specific contact resistance of 2.57×10^(-5)Ω·cm^(2) which is two orders of magnitude lower than the GaN contact layer(7.61×10^(-3)Ω·cm^(2)).A decrease in the specific contact resistance arises from the reduction of the barrier between the metal and p-type In0.15Ga0.85N.To develop an optimal metal electrode combination on the In0.15Ga0.85N contact layer,the Pd/Au and Ni/Au electrode stacks which are most commonly used in the formation of Ohmic contact with p-GaN are investigated.Metal stack of 10/30 nm Pd/Au is demonstrated effective in reducing the specific contact resistance to 10^(-5)Ω·cm^(2) level.The mechanism of the variation of the specific contact resistance under different annealing atmospheres is explained by auger electron spectroscopy.

关 键 词：P-GAN Ohmic contact specific contact resistance 

分 类 号：TN31[电子电信—物理电子学]