InSb晶体生长模拟仿真技术现状及展望  

Current situation and prospect of InSb crystal growth simulation technology

作　　者：杨文博 赵超[1] 董涛 折伟林[1] 邢伟荣[1] YANG Wen-bo;ZHAO Chao;Dong Tao;SHE Wei-lin;XING Wei-rong(11th Research Institute of CETC,Bejing 100015,China)

机构地区：[1]中国电子科技集团公司第十一研究所,北京100015

出　　处：《激光与红外》2024年第12期1807-1814,共8页Laser & Infrared

摘　　要：计算机模拟仿真技术是提升直拉法生长的大直径InSb单晶质量、降低晶体制备成本的有效工具。现在市面上投入使用的模拟仿真软件种类众多,而用于InSb晶体生长的模拟案例很少。通过对已有使用案例的分析可以获知各型软件的特点,分析对比各自的优缺点和适用的生长方法,结合InSb晶体生长特性来选择最适合用于InSb直拉法生长的模拟软件。Computer simulation technology is an effective tool to improve the quality of large-diameter InSb single crystals grown by Czochralski method and reduce crystal preparation costs.There are many types of simulation software currently available on the market,but there are very few simulation cases used for InSb crystal growth.By analyzing the existing cases,the characteristics of each type of software can be obtained,and their advantages and disadvantages as well as applicable growth methods can be compared.Based on the growth characteristics of InSb crystals,the most suitable simulation software for the InSb Czochralski growth can be selected.

关 键 词：INSB 晶体生长 模拟 直拉法 

分 类 号：TN213[电子电信—物理电子学] TP391[自动化与计算机技术—计算机应用技术]