DRAM研究现状与发展方向  

Research status and development direction of DRAM

作　　者：牛君怡 孙锴 Niu Junyi;Sun Kai(School of Integrated Circuits,University of Chinese Academy of Sciences,Beijing 101408,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)

机构地区：[1]中国科学院大学集成电路学院,北京101408 [2]中国科学院微电子研究所,北京100029

出　　处：《电子技术应用》2024年第12期21-30,共10页Application of Electronic Technique

基　　金：国家自然科学基金面上项目(62374173)。

摘　　要：动态随机存取存储器(DRAM)因其高存储密度和成本效益,在现代大规模计算机和超高速通信系统中得到广泛应用。主要介绍动态DRAM的发展历程、关键技术、国内外研究进展以及未来发展方向。首先,介绍了DRAM的分类、基本单元结构、工作原理。其次,详细介绍了DDR SDRAM的关键性能指标以及专用DRAM的发展。然后,介绍了提高DRAM访问速度、容量与密度的创新DRAM架构和技术,以及无电容存储单元结构、3D堆叠DRAM技术以及Rowhammer安全问题及其防御机制。最后,展望了DRAM技术的未来发展方向,阐述了为了应对日益增长的高速、低功耗和高可靠性的存储需求,对现有DRAM技术的进行深入研究和创新的重要性。Dynamic Random Access Memory(DRAM)is widely used in modern large-scale computers and ultra high speed com-munication systems due to its high storage density and cost-effectiveness.This article mainly introduces the development history,key technologies,domestic and international research progress,and future development directions of dynamic DRAM.Firstly,the classification,basic unit structure,and working principle of DRAM are introduced.Secondly,the key performance indicators of DDR SDRAM and the development of dedicated DRAM are introduced in detail.Then,innovative DRAM architectures and tech-nologies that improve DRAM access speed,capacity,and density are introduced,as well as capacitor free storage cell structures,3D stacked DRAM technology,and Rowhammer security issues and defense mechanisms.Finally,the future development direc-tion of DRAM technology is discussed,and the importance of in-depth research and innovation on existing DRAM technology is emphasized to meet the growing demand for high-speed,low-power,and high reliability storage.

关 键 词：DRAM 无电容存储单元 3D DRAM Rowhammer 2T0C DRAM 

分 类 号：TP333.8[自动化与计算机技术—计算机系统结构]