铝/氮化铝电子陶瓷基板的制备及性能的研究  

Performance of Al/AlN Substrate

作　　者：彭榕[1] 周和平[1] 宁晓山[1] 林渊博[1] 徐伟[1] 

机构地区：[1]清华大学材料科学与工程系新型陶瓷与精细工艺国家重点实验室,北京100084

出　　处：《无机材料学报》2002年第6期1203-1208,共6页Journal of Inorganic Materials

摘　　要：在675～750℃、氮气气氛下,使用石墨模具压铸的方法将金属纯Al敷接在AlN电子陶瓷基板上,随后利用力学拉伸试验机测试了Al和AlN的结合强度,其界面抗拉强度>15.94MPa,然后使用金相显微镜、SEM等微观分析仪器研究其界面的微观结构,发现在Al/AlN界面没有任何新物质生成,金属铝晶粒直接在AlN陶瓷表面结晶长大.In this work, by die-casting-bonding process, in 948similar to1098K and N-2 atmosphere, Al/AlN substrate was produced successfully. The bonding strength of Al and AlN substrate tested by mechanic testing equipment was more than 15.56MPa; The micorstructure of Al/AlN interface was investigated by SEM and microscope. The results show that there is nothing produced in the interface of Al/AlN, the crystal of aluminium grows on the surface of AlN directly, the bonding temperatures have no influence on Al/AlN interface strength.

关 键 词：铝/氮化铝电子陶瓷基板 制备 性能 敷接 结合强度 电子元器件 

分 类 号：TN105[电子电信—物理电子学] TQ174.[化学工程—陶瓷工业]