碳纳米管的最新制备技术及生长机理  

The Latest Prepartion Techniques of Carbon Vanotubes and their Growth Mechanism

作　　者：胡平安[1] 王贤保[1] 刘云圻[1] 朱道本[1] 

机构地区：[1]中国科学院化学研究所,北京100080

出　　处：《化学通报》2002年第12期794-799,共6页Chemistry

基　　金：国家自然科学资金 (2 0 0 82 0 0 1;2 0 10 4 0 0 7;6 0 1710 32 );国家重点基础研究发展规划项目(G2 0 0 0 0 775 0 0;2 0 0 1CB6 10 5 0 7);中国科学院知识创新资助项目

摘　　要：结合笔者的工作综述了碳纳米管的制备技术及生长机理的最新研究进展 ,重点介绍了近两年来碳纳米管制备的进展情况 ,包括传统制备方法的改进 (电弧放电法、化学气相沉积法和激光蒸发法 )、新型制备技术、特殊结构的碳纳米管制备 ;同时探讨了碳纳米管的各种生长机理 ;The latest progress on the preparation and growth mechanism of carbon nanotubes, including the author's research work in this field, have been reviewed in this paper. Developments of synthetic technologies in the past two years, such as improvements of traditional preparation methods (arc discharge, chemical vapor deposition and laser vaporization), new techniques of preparation as well as preparation of carbon nanotubes with novel structure, are emphatically introduced. All kinds of growth mechanism of carbon nanotubes are discussed. The development direction of preparation and growth mechanism of carbon nanotubes are also proposed.

关 键 词：纳米碳管 制备 生长机理 电弧放电 化学气相沉积 激光蒸发 

分 类 号：TB383[一般工业技术—材料科学与工程]