Investigation of GaN Growth Directly on Si (001) by ECR Plasma Enhanced MOCVD  

GaN在Si(001)上的ECR等离子体增强MOCVD直接生长研究(英文)

作　　者：徐茵[1] 顾彪[1] 秦福文[1] 李晓娜[1] 王三胜[1] 

机构地区：[1]大连理工大学三束材料表面改性国家重点实验室

出　　处：《Journal of Semiconductors》2002年第12期1238-1244,共7页半导体学报（英文版）

基　　金：国家高技术研究发展计划 (No.715 -0 11-0 0 3 3 );国家自然科学基金 (批准号 :699760 0 8,695 75 0 0 3和 195 75 0 0 6)资助项目~~

摘　　要：Direct growth of GaN films on Si(001) substrate at low temperatures (620～720℃) by electron cyclotron resonance (ECR) microwave plasma enhanced metalorganic chemical vapor deposition (PEMOCVD).The crystalline phase structures of the films are investigated.The results of high resolution transmission electron microscopy (HRTEM) and X ray diffraction (XRD) indicate that high c axis oriented crystalline wurtzite GaN is grown on Si(001) but there is an amorphous layer formed naturally at GaN/Si interface.Both faces of the amorphous layer are flat and sharp,and the thickness of the layer is 2nm approximately cross the interface.The analysis supports that β GaN phase is not formed owing to the N x Si y amorphous layer induced by the reaction between N and Si during the initial nucleation stage.The results of XRD and atomic force microscopy (AFM) indicate that the conditions of substrate surface cleaned in situ by hydrogen plasma,GaN initial nucleation and subsequent growth are very important for the crystalline quality of GaN films.研究了用电子回旋共振 (ECR)等离子体增强金属有机物化学气相沉积 (PEMOCVD)技术在 Si(0 0 1)衬底上 ,低温 (6 2 0～ 72 0℃ )下 Ga N薄膜的直接外延生长及晶相结构 .高分辨透射电镜 (HRTEM)和 X射线衍射 (XRD)结果表明 :在 Si(0 0 1)衬底上外延出了高度 c轴取向纤锌矿结构的 Ga N膜 ,但在 Ga N/ Si(0 0 1)界面处自然形成了一层非晶层 ,其两个表面平坦而陡峭 ,厚度均匀 (≈ 2 nm) .分析认为 ,在初始成核阶段 N与 Si之间反应所产生的这层 Six Ny非晶层使 Ga N的 β相没有形成 .XRD和原子力显微镜 (AFM)结果表明 ,衬底表面的原位氢等离子体清洗 ,Ga N初始成核及后续生长条件对 Ga

关 键 词：PEMOCVD GaN/Si(001) interface crystalline phase structure 

分 类 号：TN304.05[电子电信—物理电子学]