微氮硅单晶中的空洞型原生缺陷  

Vacancy-Type Defects in Nitrogen-Doped Silicon

作　　者：余学功[1] 杨德仁[1] 马向阳[1] 李立本[1] 阙端麟[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《Journal of Semiconductors》2002年第12期1286-1290,共5页半导体学报（英文版）

基　　金：国家自然科学基金重点资助项目 (批准号 :5 0 0 3 2 0 10 )~~

摘　　要：研究了掺氮和不掺氮直拉硅单晶中 ,空洞型原生缺陷 (voids)的分布行为和其退火性质 .从两种晶体不同位置取样 ,观察与大尺寸 voids相关的流水花样缺陷 (FPD)沿晶体轴向的分布 ,然后在 10 5 0～ 12 5 0℃下 Ar气中退火不同时间 .实验结果表明在掺氮直拉硅中与较大尺寸 voids相关的 FPD缺陷的密度大量减少 ,其体内这种 FPD缺陷的退火行为与不掺氮直拉硅一样 ,在高温下才能被有效的消除 .这表明在直拉硅中掺氮可以抑制大尺寸的 voids的产生 ,而且掺氮硅中The distribution and annealing behavior of vacancy type grown in defects in nitrogen doped Czochralski silicon are presented.First,the distribution of FPDs relative to voids with larger size in both kinds of crystals along axis and radial directions is observed by an optical microscope and the concentration of oxygen () is measured by a Fourier transmission infrared spectrometer (FTIR) at room temperature at wave numbers of 1107cm -1 .After annealing between 1050℃ and 1250℃ in Ar ambient,FPDs on both kinds of samples are observed.It is found that the density of FPDs relative to voids with larger size in nitrogen doped silicon is smaller than that in nitrogen free silicon and the annealing behavior of voids in both kinds of samples is the same.It is suggested that nitrogen doping can suppress the formation of voids with larger size and there exists an oxide film inside voids in nitrogen doped silicon as well as that in nitrogen free silicon.

关 键 词：硅单晶 直拉硅 掺氮 空洞型缺陷 半导体 Voids缺陷 流水花样缺陷 

分 类 号：TN304.12[电子电信—物理电子学]