碳纳米管场效应晶体管的制备技术发展与挑战  

Development and Challenge in the Fabrication of Carbon Nanotube Field-effect Transistors

作　　者：高喜龙 司佳 张志勇 GAO Xilong;SI Jia;ZHANG Zhiyong(Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon‑based Electronics,School of Electronics,Peking University,Beijing,100871,CHN;School of Integrated Circuits,Beijing University of Posts and Telecommunications,Beijing,100876,CHN)

机构地区：[1]北京大学纳米器件物理与化学教育部重点实验室和碳基电子学研究中心,北京100871 [2]北京邮电大学集成电路学院,北京100876

出　　处：《固体电子学研究与进展》2024年第6期503-518,共16页Research & Progress of SSE

摘　　要：由平行阵列碳纳米管(Aligned carbon nanotubes,ACNTs)材料构建的场效应晶体管因其超高的载流子迁移率、尺寸缩减潜力、互补金属氧化物半导体(Complementary-metal-oxide-semiconductor,CMOS)的可实现性以及晶圆级制备的可能性,成为后摩尔时代高性能、低功耗场效应晶体管的强力候选者。本文综述了碳纳米管场效应晶体管的制备工艺,分别从材料制备、晶体管结构、源漏工程和栅工程等角度,详细地拆解并评价了各工艺的优势和局限性,总结了目前碳基场效应晶体管所面临的工艺挑战,讨论了适用于超大规模集成电路的工艺方案,并展望了碳纳米管晶体管工艺的未来发展。Field-effect transistors(FETs)constructed based on aligned carbon nanotube(ACNT)materials have emerged as strong candidates for high-performance and low-power FETs in the post-Moore era,owing to their exceptional carrier mobility,potential for dimensional scaling,compatibility with complementary-metal-oxide-semiconductor(CMOS)technology,and the feasibility of wafer-scale fabrication.This paper reviews the fabrication processes of carbon nanotube FETs,analyzing and evaluating their advantages and limitations from the perspectives of material preparation,transistor architecture,contact engineering,and dielectric engineering.Current process challenges for carbon-based FETs are summarized,and strategies suitable for ultra-large-scale integrated circuits are discussed.Finally,the future development of carbon nanotube transistor fabrication processes is envisioned.

关 键 词：阵列碳纳米管 场效应晶体管 集成电路 工艺优化 

分 类 号：TN1.1[电子电信—物理电子学] TN3.2