SHA和TT-LYK在钴基阻挡层集成电路CMP中的协同作用  

Synergy of SHA and TT-LYK in CMP of cobalt-based barrier integrated circuits

作　　者：方淇 潘国峰[1,2,3] 杨雪妍 胡连军 FANG Qi;PAN Guofeng;YANG Xueyan;HU Lianjun(Innovation and Research Institute of Hebei University of Technology in Shijiazhuang,Shijiazhuang 050299,China;School of Electronic and Information Engineering,Hebei University of Technology,Tianjin 300130,China;Tianjin Key Laboratory of Electronic Materials and Devices,Tianjin 300130,China;School of Information Engineering,Tianjin University of Commerce,Tianjin 300134,China)

机构地区：[1]河北工业大学创新研究院(石家庄),河北石家庄050299 [2]河北工业大学电子信息工程学院,天津300130 [3]天津市电子材料与器件重点实验室,天津300130 [4]天津商业大学信息工程学院,天津300134

出　　处：《应用化工》2024年第11期2546-2550,2561,共6页Applied Chemical Industry

基　　金：国家科技重大专项资助项目(2016ZX02301003-004-007);河北省自然科学基金(F2020202067);石家庄市科技合作专项基金(SJZZXB23003);天津市自然科学基金青年项目(23JCQNJC00840)。

摘　　要：针对集成电路铜(Cu)互连Co阻挡层在化学机械抛光(CMP)过程中存在Cu/Co去除速率(RR)选择性差、易发生腐蚀等问题,采用CMP等实验方法,研究了新型络合剂水杨羟肟酸(SHA)以及抑制剂2,2′-{[(甲基-1H-苯并三唑-1-基)甲基]亚氨基}双乙醇(TT-LTK)在Co基阻挡层CMP中的作用效果及作用机理。结果显示,在抛光条件下,SHA对Cu和Co均具有络合效果,TT-LTK对Co无抑制效果,但对Cu有显著抑制作用;在静态条件下,SHA对Co仍表现出络合特性,对Cu则表现出抑制效果,TT-LTK对Cu和Co均具有良好的缓蚀作用。同时,SHA和TT-LYK协同使用可以实现理想的Cu/Co RR和选择比,并将Cu/Co腐蚀电位差抑制至13 mV。本研究为SHA和TT-LYK在Cu互连Co基阻挡层集成电路CMP中的应用开辟了新的思路。To address the issues of poor Cu/Co removal rate(RR)selectivity and vulnerability to corrosion in the copper(Cu)interconnection Co barrier layer of integrated circuits during the chemical mechanical planarization(CMP)process,the effects and action mechanisms of the novel complexing agent salicylhydroxamic acid(SHA)and the inhibitor 2,2′-{[(methyl-1H-benzotriazol-1-yl)methyl]imino}bis-ethanol(TT-LTK)on Co-based barrier layer CMP were investigated through experiments such as CMP.The results indicate that under polishing conditions,SHA exhibits complexing effects on both Cu and Co,while TT-LTK has no inhibitory effects on Co but shows significant inhibition on Cu.Under static conditions,SHA still exhibits complexing effects on Co but inhibition effects on Cu,while TT-LTK demonstrates good corrosion inhibition effects on both Cu and Co.It was also found that the synergistic use of SHA and TT-LTK can achieve ideal Cu/Co RR and selectivity ratios,while inhibiting the Cu/Co corrosion potential difference to 13 mV.The research opens up new ideas for the application of SHA and TT-LTK in CMP of Cu interconnect Co-based barrier integrated circuits.

关 键 词：化学机械平坦化 络合剂 腐蚀 SHA TT-LYK 

分 类 号：TQ421.4[化学工程] TN405.97[电子电信—微电子学与固体电子学]