基于共面波导结构的晶圆玻片设计  

Wafer Slide Design Based on Coplanar Waveguide Structure

作　　者：王靖杰 占春连 高涵 赵耀[2] 张集权 刘超[2] WANG Jingjie;ZHAN Chunlian;GAO Han;ZHAO Yao;ZHANG Jiquan;LIU Chao(College of Optics&Electronic Science and Technology,China Jiliang University,Hangzhou 310018,China;National Defence Opto-electronic Primary Metrology Laboratory,The 41st Institute of China Electronics Technology Group Corporation,Qingdao 266000,China)

机构地区：[1]中国计量大学光学与电子科技学院,杭州310018 [2]中国电子科技集团公司第四十一研究所国防科技工业光电子一级计量站,青岛266000

出　　处：《光子学报》2024年第12期23-32,共10页Acta Photonica Sinica

基　　金：国家重点研发计划(No.2022YFF0705903);中国电子科技集团公司2023年度技术创新基金(No.KJ2304007)。

摘　　要：采用有限接地板厚度有限介质厚度的共面波导结构设计,根据保角转换理论获得了共面波导电极的理想特性参数,结合实际应用场景,建立仿真模型,通过光刻胶掩膜图形电镀和离子束刻蚀工艺实现了高质量晶圆玻片的制备,并利用矢量网络分析仪对该玻片的电极传输特性进行验证。实验结果表明,所研制的晶圆玻片可用于120 GHz高速光电器件的片上采样信息检测。Electro-optical sampling-based performance characterization of optoelectronic devices,due to its higher temporal resolution,is widely used for pulse parameter testing of high-speed photodetectors.As the core component of the electro-optical sampling system,the wafer slide is the key carrier of the electro-optical interaction.Currently,the slide is primarily fabricated using a wet etching process.Wet etching is to achieve the purpose of etching through a chemical reaction between the chemical etching liquid and the material required to be etched on the wafer,which requires a high grasp of the etching time,and the problems of over-etching and uneven etching will inevitably occur when the coplanar electrode pattern with high precision is manufactured.Gallium arsenide(GaAs)chips(after surface polishing)will be naturally oxidized in the air at room temperature,and the natural oxide layer on the surface of the wafer mainly contains Ga_(2)O_(3),As_(2)O_(3),As_(2)O_(5) and other compounds.During the wet etching process,these oxides are easy to react with corrosive liquids such as TiW and Ni to produce loose precipitates attached to the surface of the wafer.The device surface appearance and coplanar electrode adhesion are affected.The Ni layer used for wet etching is used as a hard mask for etching Au material.The stress of the Ni layer is large,and the process of etching Ni will also cause the thin linewidth Au conductor film which has a small bonding area with the GaAs substrate to fall off.As a result,the wafer formation rate is low,which seriously affects the electric-optical field interaction efficiency and reduces the accuracy of electro-optical sampling information.To solve the above problems,a coplanar waveguide structure with limited floor thickness and limited medium thickness is designed in this paper.GaAs material is used as the slide substrate.The material has a very small static birefringence effect and is not sensitive to temperature change,so it is a single crystal with good optical properties.In addition,

关 键 词：电光采样 光电探测器 晶圆玻片 共面波导 湿法刻蚀 离子束刻蚀 传输特性 

分 类 号：O436[机械工程—光学工程]