利用comsol multiphysics仿真、分析光电二极管  

Simulate and analyze photodiodes using COMSOL Multiphysics

作　　者：冯政 张威 刘召 舒巧玲 刘萍 Feng Zheng;Zhang Wei;Liu Zhao;Shu Qiaoling;Liu Ping(Hubei Huanggang Polytechnic of Emergency Management,Huanggang 438000)

机构地区：[1]湖北黄冈应急管理职业技术学院,湖北黄冈438000

出　　处：《石化技术》2024年第12期105-107,共3页Petrochemical Industry Technology

基　　金：推进职业教育“数字化发展”研究(HBYJ2024109)。

摘　　要：借助通用多物理场仿真软件(comsol multiphysics)模拟了基于砷化镓(GaAs)薄膜的光电二极管在波长为875 nm的电磁波辐射下的工作状态。与实验研究二极管电子器件的方法不同,本工作基于耦合光波与电磁场的研究思路,建立模型细致地计算了半导体材料内各处的电磁场强度。通过计算,电场强度在20450~20500 v/m区间内波动,并且在二极管两端极形成了3.96 V的电压降。This study used COMSOL Multiphysics to simulate the working state of GaAs thin film based photodiodes under electromagnetic radiation with a wavelength of 875nm.Unlike experimental research on diode electronic devices,this work is based on the research idea of coupling light waves and electromagnetic fields,and establishes a model to meticulously calculate the electromagnetic field strength at various locations inside semiconductor materials.By calculation,the electric field strength fluctuates within the range of 20450~20500v/m,and a voltage drop of 3.96V is formed at both ends of the diode.

关 键 词：通用多物理场 光电效应 PIN二极管 

分 类 号：TN3[电子电信—物理电子学]