48 V氮化镓高线性功率放大器  

High Linearity GaN Power Amplifier with 48 V Drain Bias

作　　者：金辉[1] 肖智龙 张子良 徐跃杭[1] JIN Hui;XIAO Zhilong;ZHANG Ziliang;XU Yuehang(School of Electronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 611731,China)

机构地区：[1]电子科技大学电子科学与工程学院,成都611731

出　　处：《微波学报》2024年第S1期386-389,共4页Journal of Microwaves

摘　　要：本文基于0.45μm氮化镓高电子迁移率晶体管(HEMT)工艺,设计了一款可在48V电压下应用的高线性氮化镓功率放大器。为提升功放功率回退下的线性度,基于负载牵引方法分析了漏极偏置电压对功放线性度的影响,揭示了高漏极电压和不同阻抗匹配下非线性特性,发现了48V漏压下氮化镓功放比28V漏压下具有线性度优势。测试结果验证表明,在2.3GHz~2.7GHz范围内,功放饱和输出功率大于42.5 dBm,且输出33 dBm下EVM小于1.72%。In this paper,a linear GaN power amplifier that can be applied at a voltage of 48V based on a 0.45um GaN high electron mobility transistor(HEMT)process is designed.To enhance the linearity of power amplifier under power back-off,the influence of the drain bias voltage on the linearity of the power amplifier is analyzed based on the load-pull method,revealing the nonlinear characteristics under high drain voltage and different impedance matching.It is found that the GaN power amplifier under 48V drain voltage has a linearity advantage compared to that under 28V drain voltage.The test results show that in the range of 2.3GHz-2.7GHz,the saturated output power of the power amplifier is greater than 42.5 dBm,and the EVM is less than 1.72%at an output of 33 dBm.

关 键 词：氮化镓 功率放大器 高漏压偏置 高线性 

分 类 号：TN722.75[电子电信—电路与系统]