Cu/MgO/MoS_(2)/Cu结构的电阻开关特性  

Resistive switching characteristics of Cu/MgO/MoS_(2)/Cu structure

作　　者：何小龙 陈鹏[1] HE Xiaolong;CHEN Peng(School of Physics Science and Technology,Southwest University,Chongqing 400715,China)

机构地区：[1]西南大学物理科学与技术学院,重庆400715

出　　处：《物理学报》2025年第2期256-264,共9页Acta Physica Sinica

摘　　要：采用磁控溅射的方法制备了Cu/MgO/Cu,Cu/MgO/MoS_(2)/Cu和Cu/MoS_(2)/MgO/Cu三种器件.通过对器件的表征测试及I-V曲线的测量,发现对于Cu/MgO/Cu器件,加入MoS_(2)插入层后,器件的电阻开关特性会发生大的变化.分析结果表明,MoS_(2)插入层并没有改变器件的主要传导机制(空间电荷限制传导),但影响了界面势垒的调控作用,这种影响还与MoS_(2)插入层的位置有关.Cu/MgO/Cu,Cu/MgO/MoS_(2)/Cu和Cu/MoS_(2)/MgO/Cu三种器件中,Cu/MgO/MoS_(2)/Cu器件表现出更大的开关比(约为103)和更低的复位电压(约为0.21 V),这可以归因于MgO与MoS_(2)之间界面势垒的调控.而Cu/MoS_(2)/MgO/Cu器件表现出较好的可靠性和稳定性.此外,MoS_(2)层在插入到底电极Cu和MgO之间时,器件的漏电流有明显的降低.During the study of resistive switching devices,researchers have found that the influence of the insertion layer cannot be ignored.Many reports have confirmed that the appropriate insertion layer can significantly improve the performance of the resistive switching devices.Therefore,in this work,we use magnetron sputtering to fabricate three devices:Cu/MgO/Cu,Cu/MgO/MoS_(2)/Cu and Cu/MoS_(2)/MgO/Cu.Through the characterization test of each device and the measurement of the I-V curve,it is found that the resistive switching characteristics of the Cu/MgO/Cu device will change greatly after adding an MoS_(2) insertion layer.The analysis results show that the inserted MoS_(2) layer does not change the main transmission mechanism(space charge limited conduction)of the device,but affects the regulating function of interfacial potential barrier,the effect also is related to the location of MoS_(2) inserted into the layer.Among the Cu/MgO/Cu,Cu/MgO/MoS_(2)/Cu and Cu/MoS_(2)/MgO/Cu devices,the Cu/MgO/MoS_(2)/Cu device exhibits a larger switching ratio(about 103)and a lower reset voltage(about 0.21 V),which can be attributed to the regulation of the interface barrier between MgO and MoS_(2).In addition,when the MoS_(2) layer is inserted between the bottom electrodes Cu and MgO,the leakage current of the device is significantly reduced.Therefore,Cu/MoS_(2)/MgO/Cu device has the highest commercial value from the point of view of practical applications.Finally,according to the XPS results and XRD results,we establish the conductive filament models for the three devices,and analyze the reasons for the different resistive switching characteristics of the three devices.

关 键 词：电阻开关特性 界面势垒 开关比 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]