半导体气体流量控制器原位校准装置研究  

Research on In-situ Calibration Device of Gas Flow Controller for Semiconductor

作　　者：回博旭 徐志鹏[1] 张高明 周彬 孙英恺 HUI Boxu;XU Zhipeng;ZHANG Gaoming;ZHOU Bin;SUN Yingkai(Zhejiang Provincial Key Laboratory of Flow Measurement Technology,China Jiliang University,Hangzhou,Zhejiang 310018;Unit 32120 of the Chinese People's Liberation Army,Dalian,Liaoning 116500)

机构地区：[1]中国计量大学浙江省流量计量技术研究重点实验室,浙江杭州310018 [2]中国人民解放军32120部队,辽宁大连116500

出　　处：《液压与气动》2025年第1期90-94,共5页Chinese Hydraulics & Pneumatics

基　　金：浙江省自然科学基金(LQ24E060007);浙江省基本科研业务费资助项目(2022YW33);浙江省产学合作协同育人项目(2021-2022)。

摘　　要：半导体制造需使用多种气体用于沉积、光刻等工序,气体流量控制的精度直接影响加工质量。而流量控制器需要经常检测和校准以确保其工作性能。半导体设备和工艺的特殊性决定了流量控制器只能进行原位校准。为解决流量控制器的原位校准问题,根据半导体设备的特点提出一种基于动态pVTt方法的流量控制器原位校准装置,基于CFD仿真对固定容器充气后的非稳态流场进行计算,并预测流场稳定后的平均温度,从而实现充气气体流量的快速检测。通过与高精度流量校准装置对比,装置可以实现N2介质50~50000 mm^(3)/s的流量校准,精度优于0.5%。Semiconductor manufacturing requires various processing gas for deposition,photolithography,and other processes,and the accuracy of gas flow control directly affects the processing quality.Mass flow controllers require frequent testing and calibration to ensure processing quality.The particularity of semiconductor equipment and processes determines that mass flow controllers can only use in-situ calibration.To solve the in-situ calibration problem of flow controllers,a flow controller in-situ calibration device based on dynamic pVTt method is proposed according to the characteristics of semiconductor equipment.The unsteady flow field of the fixed chamber after inflation is calculated based on CFD simulation,and the average temperature after stabilization is predicted.And the rapid calculation of the inflation gas flow rate can be realized.Compared with the high precision flow standard,the device can realize the flow calibration of N2 medium in the range of 50~50000 mm^(3)/s with an accuracy of better than 0.5%.

关 键 词：半导体 气体流量 原位校准 流量控制器 动态pVTt 流场预测 

分 类 号：TH138[机械工程—机械制造及自动化] TH715TH814