Pb_(0.9)Sr_(0.1)(Zr_(0.5)Ti_(0.5))_((1-x))Ce_(x)O_(3)陶瓷制备及介电、铁电性能研究  

Study on preparation and dielectric and ferroelectric properties ofPb_(0.9)Sr_(0.1)(Zr_(0.5)Ti_(0.5))_((1-x))Ce_(x)O_(3)ceramics

作　　者：张涛 王开平[2] 吴利娜 杨龙海 杨静 李敏 李明昌[1] ZHANG Tao;WANG Kaiping;WU Lina;YANG Longhai;YANG Jing;LI Min;LI Mingchang(College of Materials Science and Engineering,Xi'an University of Science and Technology,Xi'an 710054,China;College of Sciences,Xi'an University of Science and Technology,Xi'an 710054,China;College of Electrical and Control Engineering,Xi'an University of Science and Technology,Xi'an 710054,China)

机构地区：[1]西安科技大学材料科学与工程学院,西安710054 [2]西安科技大学理学院,西安710054 [3]西安科技大学电气与控制工程学院,西安710054

出　　处：《功能材料》2025年第1期1001-1006,共6页Journal of Functional Materials

基　　金：国家自然科学基金项目(52174151,11974275,12004300);陕西省联合基金重点项目(2021JML-05);陕西省榆林市科技局基金项目(2019-138)。

摘　　要：采用固相烧结法成功制备了Pb_(0.9)Sr_(0.1)(Zr_(0.5)Ti_(0.5))_((1-x))Ce_(x)O_(3)(x=0.05~0.20)(PSCZT)陶瓷,研究了不同烧结温度与不同Ce掺杂含量对PSCZT陶瓷结构、介电、铁电性能的影响。结果表明,当烧结温度为1100℃,Ce掺杂含量为0.05时,获得了具有较高剩余极化(11.66μC/cm^(2))和较小矫顽场(17.95 kV/cm)的钙钛矿结构的致密陶瓷,此时PSCZT陶瓷的介电常数由未掺杂PZT陶瓷的518增大到912。正电子湮没测试研究表明,PZT及Ce掺杂含量为0.10时(烧结温度为1100℃)的PSCZT陶瓷样品的正电子湮没平均寿命为178.75和179.67 ps,Sr、Ce掺入使得PZT样品缺陷捕获正电子几率减小,正电子湮没平均寿命变大。Sr、Ce共掺的PZT中B位缺陷浓度降低,畴壁数量相应减少,使得畴壁更加容易移动,从而提高了PZT陶瓷的极化强度,提高了PZT陶瓷的铁电性能。Pb_(0.9)Sr_(0.1)(Zr_(0.5)Ti_(0.5))_((1-x))Ce_(x)O_(3)(x=0.05-0.20)(PSCZT)ceramics were successfully prepared by solid-phase sintering method.The effects of different sintering temperature and different Ce doping content on the structure,dielectric and ferroelectric properties of PSCZT ceramics were studied.The results showed that when the sintering temperature was 1100℃and Ce doping content was 0.05,The compact perovskite ceramics with high residual polarization(11.66μC/cm^(2))and small coercive field(17.95 kV/cm)were obtained,at this time,the permittivity of PSCZT ceramics increases from 518 to 912.The positron annihilation test results showed that the average positron annihilation lifetime of PZT and PSCZT ceramic samples with the Ce doping content of 0.10 and sintering temperature of 1100℃are 178.75 ps and 179.67 ps.The addition of Sr and Ce reduces the probability of positron capture in PZT samples,and the average positron annihilation lifetime increases.The B-site defect concentration of Sr and Ce co-doped PZT decreases,and the number of domain walls decreases accordingly,which makes the domain walls move more easily,thus improving the polarization strength and ferroelectric properties of PZT ceramics.

关 键 词：固相烧结 介电性能 铁电性能 正电子湮没技术 

分 类 号：TN384[电子电信—物理电子学]