基于激光垂直技术的碳化硅晶锭切割工艺研究  

Research on Silicon Carbide Ingot Cutting Process Based on Laser Vertical Technology

作　　者：吕麒鹏 LYU Qipeng(The 2nd Research Institute of China Electronics Technology Group Corporation,Taiyuan 030024,China)

机构地区：[1]中国电子科技集团公司第二研究所,山西太原030024

出　　处：《机械工程与自动化》2025年第1期162-164,共3页Mechanical Engineering & Automation

摘　　要：与传统硅基半导体器件不同,单晶衬底材料占SiC器件成本的50%,SiC材料的高硬度特性导致切割速度慢、晶体与切割线损耗大、加工良品率低,大幅增加了衬底的成本,并影响衬底的产能提升。利用激光技术在晶体内部实现高密度光吸收,发生化学键断裂、激光诱导电离、热致开裂等物理化学过程,形成垂直于激光入射方向的改质层,再通过多因素协同诱导晶体剥离技术实现晶锭切片,从原理上避免了锯口损失,且剥离表面/亚表面损伤程度低,具有低损耗、高效率、高质量等优点。Different from traditional silicon-based semiconductor devices,single crystal substrate materials account for 50%of the cost of SiC devices,and the high hardness characteristics of SiC materials lead to slow cutting speed,large crystal and cutting line loss,and low processing yield,which greatly increases the cost of the substrate and affects the production capacity of the substrate.The laser technology is used to achieve high-density light absorption inside the crystal,and physical and chemical processes such as chemical bond breakage,laser-induced ionization,and heat-induced cracking occur to form a modified layer perpendicular to the laser incidence direction,and then the crystal ingot slice is realized through multi-factor synergistic induced crystal peeling technology,which avoids the loss of the saw edge in principle,and has the advantages of low loss,high efficiency and high quality.

关 键 词：碳化硅 晶锭切片 激光改质 激光剥离 激光诱导 

分 类 号：TG113.26[金属学及工艺—物理冶金]