沉积温度对AlN陶瓷表面电弧离子镀Ni涂层性能的影响  

Effect of deposition temperature on the properties of arc ion plating Ni coatings on AlN ceramic surfaces

作　　者：耿子航 孙世龙 尤斌 林荣川[1] 郑新建 GENG Zihang;SUN Shilong;YOU Bing;LIN Rongchuan;ZHENG Xinjian(College of Marine Equipment and Mechanical Engineering,Jimei University,Xiamen 361021,Fujian Province,China)

机构地区：[1]集美大学海洋装备与机械工程学院,福建厦门361021

出　　处：《电子元件与材料》2024年第12期1431-1436,共6页Electronic Components And Materials

基　　金：福建省高校产学研合作项目(2021H6031);福建省高校产学研合作项目(2022H6030);福建省科技计划引导性项目(2023H0014)。

摘　　要：AlN陶瓷具有高热导率、低热膨胀系数、优异的电学性能和机械性能等优点,是一种理想的电子封装基板材料,在电子封装基板领域应用广泛。然而,当其作为封装基板材料使用时,必须对其表面进行金属化处理,才能实现陶瓷与金属的互连。本文创新性采用电弧离子镀在AlN陶瓷表面沉积金属Ni涂层,并研究了沉积温度(200,300,400,500℃)对涂层微观结构与性能的影响。结果表明:随着沉积温度的升高,涂层沉积速率与表面粗糙度先升高后降低,在沉积温度400℃时,沉积速率和表面粗糙度分别为7.173 nm/min和0.20μm,此时涂层表面质量最好;随着沉积温度的升高,涂层硬度与结合力先升高后降低,均在400℃时达到最高,分别为1443 HV和59.6 N;在500℃时制备的金属化陶瓷电阻最小,为0.86×10^(-7)Ω。本文所采用的AlN陶瓷金属化新方法,为AlN陶瓷基板的制备提供新思路,同时为获得具有优异性能的AlN陶瓷基板提供依据。AlN ceramics have advantages of high thermal conductivity,low coefficient of thermal expansion,excellent electrical properties and mechanical properties.As a result,it is an ideal material for electronic packaging substrate,which has been widely used as substrate for electronic packaging.When used as an encapsulated substrate,the surface must be metallized to achieve ceramic-metal interconnections.In this article,metallic Ni films were deposited on the surface of the AlN ceramics by arc ion plating in an innovative way.The effects of deposition temperatures(200,300,400,500℃)were investigated on the microstructure and properties of the coatings.The results showed that at higher deposition temperature the coating deposition rate and surface roughness firstly increased and then decreased.The surface quality of the coating was optimized at the deposition temperature of 400℃,where the deposition rate and surface roughness was 7.173 nm/min and 0.20μm,respectively.The hardness and bonding strength of the coating also reached the highest at 400℃with the value of 1443 HV and 59.6 N,respectively.The metallized ceramics prepared at 500℃had the lowest resistance of 0.86×10^(-7)Ω.The new method provides a new idea for the metallization of AlN ceramic substrates.It also provides a basis for optimizing the process parameters for surface metallization of AlN ceramics to achieve excellent properties.

关 键 词：AlN陶瓷金属化 Ni涂层 电弧离子镀 沉积温度 涂层性能 

分 类 号：TB34[一般工业技术—材料科学与工程]