硅基异质结中波红外光电探测器的研究进展  

Research Progress of Silicon-Based Heterojunction Mid-Wave Infrared Photodetectors

作　　者：曾雨玲 冯松[1] 马保科[1] 何心怡 吴鉴洋 李浩杰 Zeng Yuling;Feng Song;Ma Baoke;He Xinyi;Wu Jianyang;Li Haojie(School of Science,Xi’an Polytechnic University,Xi’an 710600,China)

机构地区：[1]西安工程大学理学院,西安710600

出　　处：《航空兵器》2024年第6期36-43,共8页Aero Weaponry

基　　金：国家重点研发计划项目(2018YFB2200500);国家自然科学基金项目(61204080);国家重点实验室基金项目(SKL201804);陕西省重点研发计划项目(2022GY-012)。

摘　　要：中波红外光电探测器是一种重要的光电探测设备,利用光电效应将红外辐射转化为电信号,广泛应用于制导、无人机、战斗机等平台,在目标探测、跟踪和识别方面有着重要作用。而硅基异质结中波红外光电探测器以硅材料为基础,结合了成熟的硅器件工艺和红外探测性能,具有低成本、易制备、高集成等优势,成为突破传统硅基光电子器件瓶颈的契机。随着研究的不断进步,硅基异质结中波红外光电探测器在各个方面都取得了很大的进展,为红外光电探测技术带来了新的机遇和挑战。本文从不同材料的硅基异质结进行了讨论,具体阐述了新型锗/硅,石墨烯/硅和化合物半导体/硅中波红外光电探测器的研究发展,分析对比了不同材料的探测器的优点。Mid-wave infrared photodetector is an important photoelectric detection equipment,which uses the photoelectric effect to convert infrared radiation into electrical signals.It is widely used in guidance,unmanned aerial vehicles,fighter jets and other platforms,and plays an important role in target detection,tracking and identification.Silicon-based heterojunction mid-wave infrared photodetectors are based on silicon materials,combined with mature silicon device technology and infrared detection performance,and have the advantages of low cost,easy preparation and high integration,becoming an opportunity to break through the bottleneck of traditional silicon-based optoelectronic devices.With the continuous progress of research,silicon-based heterojunction mid-wave infrared photodetectors have made great progress in various aspects,bringing new opportunities and challenges to infrared photoelectric detection technology.In this paper,the research and development of new germanium/silicon,graphene/silicon and other silicon-based heterojunction mid-wave infrared photodetectors are discussed,and the advantages of detectors of different materials are analyzed and compared.

关 键 词：半导体器件 光电器件 探测器 中波红外 硅基异质结 

分 类 号：TJ760[兵器科学与技术—武器系统与运用工程] TN215[电子电信—物理电子学]