第三代半导体切割技术概述  

Overview of third-generation semiconductor dicing technology

作　　者：谢天欢 蔡晓峰 程晋红 张洪波 陈健 XIE Tian-huan;CAI Xiao-feng;CHENG Jin-hong;ZHANG Hong-bo;CHEN Jian(Unimos Microelectronics(Shanghai)Co.,Ltd.)

机构地区：[1]宏茂微电子(上海)有限公司

出　　处：《中国集成电路》2025年第1期40-46,共7页China lntegrated Circuit

摘　　要：鉴于电力电子器件趋向于在高温、高压、高辐射等恶劣环境下工作,传统的半导体材料硅无法适应该发展趋势,故第三代半导体凭借更宽的带隙宽度、更高的击穿电场、更高的导热系数等能力在该领域的应用上凸显了优势。为此,第三代半导体晶圆切割作为半导体制造的一个重要环节,晶圆加工精度要求也愈发严格。本文详细介绍了传统刀轮切割、激光烧蚀切割、水辅助激光切割、激光热裂切割和激光隐形切割工艺的基本原理,为进一步研究和应用提供参考。With the development of microelectronics technology,power electronic devices tend to work in high temperature,high voltage,high radiation and other harsh environments.The traditional semiconductor material silicon can not adapt to this development trend.Third-generation semiconductors with wider bandgap width,higher breakdown field,higher thermal conductivity and other capabilities in the application of semiconductor wafers is increasingly important.Wafer dicing is an important part of semiconductor manufacturing,and the precision requirements of wafer processing are becoming more and more stringent.In this paper,the basic principles of traditional knife wheel cutting,laser ablation cutting,water-assisted laser cutting,laser thermal fracture cutting and laser stealth cutting processes are introduced in detail to provide reference for further research and application.

关 键 词：晶圆切割技术 第三代半导体 传统刀轮切割 激光切割 

分 类 号：TN304[电子电信—物理电子学]