相移光量子忆阻器及突触特性研究  

RESEARCH ON PHASE-SHIFT OPTICAL QUANTUM MEMRISTORS AND THEIR SYNAPTIC PROPERTIES

作　　者：李威 代广珍 Li Wei;Dai Guangzhen(School of Electrical Engineering,Anhui Polytechnic University,241000,Wuhu,Anhui,China;Anhui Province Automotive Display Integration System Anhui Province Engineering Research Center,241000,Wuhu,Anhui,China)

机构地区：[1]安徽工程大学电气工程学院,安徽芜湖241000 [2]安徽省车载显示集成系统安徽省工程研究中心,安徽芜湖241000

出　　处：《山东师范大学学报(自然科学版)》2024年第4期331-338,共8页Journal of Shandong Normal University(Natural Science Edition)

基　　金：国家自然科学基金资助项目(62174001);安徽省教育厅自然科学基金重点资助项目(2023AH050922)。

摘　　要：光量子忆阻器可通过反射率可调的分束器实现,其中反射率依据出射光束的测量反馈进行动态调整。先前报道的光量子忆阻器展示出了捏滞曲线如何随积分区间的变化而演变,但其捏滞曲线的叶片面积并不受输入信号频率的影响。鉴于此,提出了一种利用移相器中的相位偏移作为状态变量构建的新型光量子忆阻器。新的光量子忆阻器受输入信号的频率影响,展现出与经典忆阻器相似的特性,其捏滞曲线随输入频率的增加而趋向于一条直线。对光量子忆阻器的类脑突触特性进行深入分析验证了其在模拟人工突触功能方面的可行性与潜力。基于条件反射理论,设计了一种能够实现全功能巴甫洛夫联想记忆结构的方案,并通过详尽的模拟实验对该结构的正确性与有效性进行了验证。The optical quantum memristor is achieved through a beam splitter with adjustable reflectivity,where the reflectivity is dynamically adjusted based on the measurement feedback of the outgoing light beam.Previously reported optical quantum memristors have demonstrated how the hysteresis curve evolves with changes in the integration interval,but the area of the hysteresis curve is not influenced by the frequency of the input signal.In light of this,a novel optical quantum memristor is proposed,which utilizes the phase shifter to construct the state variable.The new optical quantum memristor is influenced by the frequency of the input signal and exhibits characteristics similar to classical memristors,with its hysteresis curve approaching a straight line as the input frequency increases.An in-depth analysis of the brain-like synaptic characteristics of the optical quantum memristor is also conducted,confirming its feasibility and potential in simulating artificial synaptic functions.Finally,based on the theory of conditioned reflexes,a scheme for a fully functional Pavlovian associative memory structure is proposed,of which the correctness and effectiveness are verified through comprehensive simulation experiments.

关 键 词：光量子忆阻器 人工突触 突触模拟 联想记忆 

分 类 号：O431.2[机械工程—光学工程]