单晶硅在等离子体刻蚀中沿不同晶向的各向异性  

Plasma Etching Anisotropy of Monocrystalline Silicon Along Different Crystal Orientations

作　　者：孟利园 李西军 李冉冉 张公开 王云生 曹杰 苏德香 张先锋 Meng Liyuan;Li Xijun;Li Ranran;Zhang Gongkai;Wang Yunsheng;Cao Jie;Su Dexiang;Zhang Xianfeng(Center for Micro/Nano Fabrication,Westlake University,Hangzhou 310030,China;Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province,Westlake University,Hangzhou 310030,China)

机构地区：[1]西湖大学先进微纳加工与测试平台,杭州310030 [2]西湖大学浙江省3D微纳加工和表征研究重点实验室,杭州310030

出　　处：《微纳电子技术》2025年第2期73-80,共8页Micronanoelectronic Technology

摘　　要：阐述了单晶硅在等离子体刻蚀中沿不同晶向表现出各向异性刻蚀的原理。通过实现特定的结构直观地展示了单晶硅上形成深孔并继续横向刻蚀形成扩孔区的过程。总结了能够影响各向异性刻蚀的因素有晶向、深宽比、刻蚀条件,针对这三方面的因素,收集了角度Ф、深宽比和腔压与横向刻蚀速率v_R的详细数据,详细分析了三个因素与各向异性规律的关系,并得出结论:等离子体刻蚀中若要表现沿晶向的各向异性规律需要满足以下两个条件,即刻蚀必须发生在高深宽比的通孔底部;刻蚀反应由热化学反应主导,而非定向运动的物理刻蚀主导。最后展望了该刻蚀机制结合光刻阵列图形设计的应用场景。The principle of the anisotropy etching of monocrystalline silicon along different crystal orientations in the plasma etching is expounded.The process of forming deep hole on the monocrystalline silicon and continuing transverse etching to reaming zone is visually demonstrated by realizing specific structures.The factors that can affect anisotropic etching are summarized,such as crystal orientation,depth-width ratio and etching conditions.In view of the three factors,detailed data of angleФ,depth-width ratio and cavity pressure with the transverse etching rate vR are collected.The relationships between three factors and anisotropy law are analyzed in detail,and conclusions are obtained that in order to show the anisotropy laws along crystal orientations in the plasma etching,the following two conditions need to be met,that is,etching process must occur at the bottom of the deep hole with a high depth-width ratio;the etching reaction is dominated by the thermochemical reaction,rather than the physical etching along with directed motion.Finally,the application scenarios of the etching principle combined with the patterning design of the lithographic array are prospected.

关 键 词：单晶硅 等离子体刻蚀 晶向 各向异性 深宽比 

分 类 号：TN304[电子电信—物理电子学] TN305