倍增层Si浓度对β-FeSi_(2)/Si红外探测器性能的影响研究  

Study of the Effect of Si Concentration in the Multiplication Layer on the Performance of β-FeSi_(2)/Si Infrared Detectors

作　　者：朱朝阳 叶伟[1] 彭慧龙 陈昱坤 ZHU Zhaoyang;YE Wei;PENG Huilong;CHEN Yukun(School of Mechanical Engineering,Shaanxi University of Science and Technology,Hanzhong 723001,China)

机构地区：[1]陕西理工大学机械工程学院,陕西汉中723001

出　　处：《河南科技》2025年第1期73-77,共5页Henan Science and Technology

基　　金：陕西省教育厅重点实验室项目(16JS016);陕西省教育厅专项科研计划(18JK0151);陕西“十四五”教育科学规划2022年度课题(SGH22Y1351)。

摘　　要：【目的】为降低暗电流,改善器件性能,对不同的倍增层Si掺杂浓度在电场分布、暗电流和响应度等性能方面的影响进行探讨,以获得掺杂浓度的最优值。【方法】利用半导体仿真软件Silvaco-TCAD深入探讨了倍增层Si掺杂浓度对β-FeSi_(2)/Si近红外探测器性能的影响规律。【结果】随着倍增层掺杂浓度的提升,倍增层内部电场强度峰值逐渐增加,暗电流密度与电容值也将相应提高,光响应度基本保持不变。进一步研究表明,当倍增层掺杂浓度为1×10^(15) cm^(-3)时,器件获得良好的性能,暗电流密度为9.93×10^(-6) A/cm^(2),在波长为1.5μm时,光响应度和比探测率分别为0.4452 A/W和1.77×10^(11) cm·Hz^(1/2)W^(-1)。【结论】研究结果对制备高性能的β-FeSi_(2)/Si红外探测器具有指导意义。[Purposes]In order to reduce the dark current and improve the performance of the device,the effects of different multiplication layer Si doping concentration on its performance in terms of electric field distribution,dark current and responsivity are explored to obtain the optimal value of doping concentration.[Methods]The influence of the multiplication layer Si doping concentration on the performance of β-FeSi_(2)/Si near-infrared detector is deeply explored by using the semiconductor simulation software Silvaco-TCAD.[Findings]The results show that with the increase of the doping concentration of the multiplication layer,the peak electric field intensity inside the multiplication layer gradually increases,and the dark current density and capacitance value will be increased accordingly,while the optical responsivity remains basically unchanged.Further studies show that when the doping concentration of the doubling layer is 1×10^(15) cm^(-3),the device obtains good performance with a dark current density of 9.93×10^(-6) A/cm^(2),and the photoresponsivity and specific detectivity at a wavelength of 1.5μm are 0.4452 A/W and 1.77×10^(11) cm·Hz^(1/2) W^(-1),respectively.[Conclusions]The results of the study are of guiding significance for the future preparation of high-performance β-FeSi_(2)/Si infrared detectors.

关 键 词：掺杂浓度 倍增层 暗电流 红外探测器 

分 类 号：TN215[电子电信—物理电子学]