沉积温度对氮化铝压电薄膜性能影响及机制分析  

Effect and mechanism analysis of deposition temperature on the properties of aluminum nitride piezoelectric thin films

作　　者：郭燕[1] 刘小军[1] 王进 GUO Yan;LIU Xiaojun;WANG Jin(Taizhou Institute of Science and Technology,Nanjing University of Science and Technology,Taizhou,Jiangsu 225300,China;Tianjin Sanan Optoelectronics Co.,Ltd.,Tianjin 300450,China)

机构地区：[1]南京理工大学泰州科技学院,江苏泰州225300 [2]天津三安光电有限公司,天津300450

出　　处：《光电子.激光》2025年第1期107-112,共6页Journal of Optoelectronics·Laser

基　　金：江苏省第六期333高层次人才培养工程项目(苏人才办[20222]号);教育部产学研合作协同育人项目(220606545244324)资助项目。

摘　　要：高频光电通信器件对压电材料特性要求越来越高,氮化铝(AlN)薄膜由于其优异的压电特性而备受关注,高取向高压电AlN薄膜沉积工艺优化成为其应用拓展的瓶颈技术之一,众多制备工艺参数中温度是影响AlN薄膜晶格取向的关键参数之一。本文采用磁控溅射的方法沉积AlN薄膜,研究了沉积温度对AlN薄膜晶体取向及压电性能的影响,X射线衍射(X-ray diffraction,XRD)测试结果表明,250℃下可获得(100)取向AlN,300℃下AlN则优先(002)取向;压电测试结果表明,250℃下压电常数d_(33)^(*)达最大值0.79 V,表现出较优的压电特性。基于原子力显微镜(atomic force microscopy,AFM)结果及温度对价键稳定性影响分析探索了温度对其生长的影响机制。High frequency optoelectronic communication devices require increasingly high piezoelectric material properties,and aluminum nitride(AlN)thin films have attracted attention due to their excellent piezoelectric properties.The deposition process optimization of AlN thin film with high orientation and high-piezoelectric performance has become one of the bottleneck technologies for its application and expansion.Among many preparation process parameters,temperature is one of the key parameters affecting the lattice orientation of AlN thin films.In this paper,aluminum nitride thin films were deposited by magnetron sputtering system,and the effect of deposition temperature on AlN thin film crystal orientation and piezoelectric performance was discussed.X-ray diffraction(XRD)results show that(100)oriented AlN can be obtained under 250℃deposited temperature,and(002)oriented AlN is preferred under 300℃;The piezoelectric test results show that piezoelectric constant d_(33)^(*)reaches its maximum value of 0.79 V under 250℃,exhibiting excellent piezoelectric characteristics.Based on atomic force microscopy(AFM)and effect of temperature on stability of valence bonds,the mechanism of temperature on its growth was explored.

关 键 词：氮化铝(AlN) 衬底温度 取向生长 压电特性 

分 类 号：TN43[电子电信—微电子学与固体电子学]