CVD二硒化钼光电探测器的制备与性能分析  

Preparation and Properties of Photodetectors based on CVD MoSe_(2) Film

作　　者：耿铭涛 坚佳莹 董芃凡 李靖筠 GENG Mingtao;JIAN Jiaying;DONG Pengfan;LI Jingyun(The Shaanxi Key Laboratory of Photoelectric Functional Materials and Devices,Xi’an Technological University,Xi’an 710021,China;School Electronic Information Engineering,Xi’an Technological University,Xi’an 710021,China)

机构地区：[1]西安工业大学陕西省光电功能材料与器件重点实验室,西安710021 [2]西安工业大学电子信息工程学院,西安710021

出　　处：《西安工业大学学报》2024年第6期695-704,共10页Journal of Xi’an Technological University

基　　金：国家自然科学基金项目(62204197);陕西省科技厅项目(2023KJXX-148);西安市科学技术协会项目(959202313058)。

摘　　要：二维过渡金属硫族化合物(TMDs)具有可调的带隙、高光电转换效率、强光吸收能力、快速载流子传输速度,成为制备光敏层的研究热点。文中通过化学气相沉积法制备MoSe_(2)薄膜材料,并采用干法转移制备出光电探测器。研究结果表明,MoSe_(2)光电探测器能够在250~850 nm的波长范围内实现响应,光响应度达到9.53 mW·cm^(-2),比探测率可达3.35×10^(10)cm·Hz^(1/2)·W^(-1),外量子效率可达3.08×10^(-11)%,上升时间短于44 ms,下降时间短于39 ms,且能探测到的最小光强为0.01 mW·cm^(-2)。MoSe_(2)材料其带隙可调、柔性化、轻量化等特点,使其成为实现高性能、宽光谱响应的光电探测器的理想选择。Two-dimensional transition metal-sulfur compoundsTMDs) characterized by tunable bandgap,high photoelectric conversion efficiency,strong light absorption,and fast carrier transport rate have become a focus in the study of the preparation of photosensitive layers.MoSe_(2) thin film materials were prepared by the chemical vapour deposition and photodetectors were prepared by the method of dry transfer.The results show that the MoSe_(2) photodetector can respond in the wavelength range of 250~850 nm,with the photoresponsivity up to 9.53 mW·cm^(-2),the specific detectivity up to 3.35×10^(10) cm·Hz^(1/2)·W^(-1),the external quantum efficiency up to 3.08×10^(-11) %,the rise time and the fall time shorter than 44 ms and 39 ms,respectively.The minimum detectable light intensity is 0.01 mW·cm^(-2).MoSe_(2) materials,due to their adjustable bandgap,flexibility and light weight,has become an ideal option for high-performance photodetectors with broad spectral response.

关 键 词：光电探测器 光响应度 宽光谱 弱光探测 

分 类 号：TN3[电子电信—物理电子学]