LPCVD沉积氮化硅硬掩膜工艺研究  

Study on Hard Mask Technology of Si_(3)N_(4) Thin Films Deposition by LPCVD

作　　者：殷启明 邓永和[1] 杨金[2] YIN Qiming;DENG Yonghe;YANG Jin(School of Computational Science and Electronics,Hunan Institute of Engineering,Xiangtan 411104,China;The 48th Research Institute of China Electronics Technology Group Corporation,Changsha 410111,China)

机构地区：[1]湖南工程学院计算科学与电子学院,湘潭411104 [2]中国电子科技集团第四十八研究所,长沙410111

出　　处：《湖南工程学院学报(自然科学版)》2024年第4期71-75,共5页Journal of Hunan Institute of Engineering(Natural Science Edition)

基　　金：湖南省自然科学基金资助项目(2021JJ50115);湖南省教育厅科学研究项目(22A0522).

摘　　要：本文主要研究低压化学气相沉积(LPCVD)制备的Si_(3)N_(4)硬掩膜膜厚以及减少颗粒污染问题.研究发现当温度控制在780℃,体积流量控制在790 cm^(3)·min^(-1),沉积时间为25 min时,可以较好地控制薄膜膜厚于80±0.5 nm.通过采用N_(2)循环吹扫清洁反应室以及在SiH_(2)Cl_(2)的传输管路上添加伴热带,并将伴热带温度稳定在40℃的方法,可以有效减少颗粒污染,颗粒度平均值从219.15降到了72.55,颗粒度超标率从75%降到了10%.In this paper,the thickness of Si_(3)N_(4)hard mask prepared by low pressure chemical vapor deposition(LPCVD)and the reduction of particle pollution are studied.The results are shown that the film thickness of 80±0.5 nm can be better controlled,when the temperature is controlled at 780℃,the volume flow rate is controlled at 790 cm^(3)·min^(-1),and the deposition time is 25 min.The particle pollution can be effectively reduced by using N_(2) cycle purge to clean the reaction chamber and adding a trace zone on the SiH_(2)Cl_(2) transmission pipe,and keeping the trace zone temperature at 40℃.The average particle pollution is reduced from 219.15 to 72.55,and the particle size excess rate is reduced from 75%to 10%.

关 键 词：氮化硅薄膜 低压化学气相沉积 膜厚 颗粒污染 

分 类 号：TN305[电子电信—物理电子学]