Comparative Study of the Hexagonal Structure of the SiC JBS Source Region  

作　　者：Yili Xu Xin Li 

机构地区：[1]Hangzhou Puxi Optoelectronic Semiconductor Technology Co.,Ltd.,Hangzhou 31700,Zhejiang Province,China

出　　处：《Journal of Electronic Research and Application》2025年第1期61-66,共6页电子研究与应用

摘　　要：Silicon carbide(SiC)junction barrier Schottky(JBS)diode has been widely used in power electronic systems due to its excellent physical characteristics and electrical performance,and the structural design of its source area has a particularly significant impact on the performance.This study provides a comparative analysis of the SiC JBS diode performance of different hexagonal structures,aiming to provide theoretical support and practical guidance for the optimization of JBS diode performance.Through theoretical derivation,experimental verification and data processing,the paper deeply analyzes the influence of hexagonal structure on JBS diode current distribution and breakdown voltage,and proposes a targeted optimization strategy.

关 键 词：SIC JBS diode Hexagon structure Performance comparison 

分 类 号：TN3[电子电信—物理电子学]