热注入法制备CuInSe_(2)量子点及光电化学性能研究  

Preparation and photoelectrochemical properties of CuInSe_(2) quantum dots prepared with thermal injection method

作　　者：任思羽 陈宇[1] 张天时 张振东 郑威[1] REN Si-yu;CHEN Yu;ZHANG Tian-shi;ZHANG Zhen-dong;ZHENG Wei(School of Material Science and Chemistry Engineering,Harbin University of Science and Technology,Harbin 150040,China)

机构地区：[1]哈尔滨理工大学材料科学与化学工程学院,黑龙江哈尔滨150040

出　　处：《化学工程师》2025年第1期6-9,18,共5页Chemical Engineer

基　　金：哈尔滨理工大学大学生创新项目(S202310214052)。

摘　　要：采用热注入法在相同温度、不同反应时间条件下制备了尺寸均一的CuInSe_(2)绿色量子点,利用电泳过程沉积到FTO(氟掺杂的二氧化锡)玻璃基底上的TiO_(2)介孔层中,随后与利用连续离子层沉积法制备的钝化层共同组成ZnS/CuInSe_(2)/TiO_(2)复合光阳极。XRD和TEM分析结果表明,成功合成尺寸约8nm的CuInSe_(2)量子点。对光阳极的光电化学性能进行分析,结果表明,当反应时间为10min、ZnS的沉积层数为4时,光阳极的电流密度最大,为5.27mA·cm^(-2),外加偏压光-电转化效率(ABPE)为0.78%,电池的性能最佳。Green CuInSe_(2)quantum dots with uniform size were prepared by thermal injection method at the same temperature with different reaction time.Through the conjunction of electrophoretically deposited CuInSe_(2)quantum dots in TiO_(2)mesoporous layer on a FTO substrate with a passivation ZnS layer prepared by SILAR method,ZnS/CuInSe_(2)/TiO_(2)composite photoanode was formed.The results of XRD and TEM proved the successful synthesis of CuInSe_(2)quantum dots with an average size of approximately 8nm.Based on the analysis of photoelectrochemical performance of photoanodes PEC revealed that the current density of the photoanode reached a maximum of 5.27mA·cm^(-)2 with a reaction time of 10 min and ZnS layer number of 4,while the applied bias photoelectrical conversion efficiency(ABPE)was 0.78%,representing the optimal performance within all cell samples.

关 键 词：CuInSe_(2)量子点 热注入法 光电化学性能 钝化层 

分 类 号：TB332[一般工业技术—材料科学与工程]