FinFET器件总剂量效应及加固研究进展  

Research Progress on Total Dose Effect and Reinforcement of FinFET Devices

作　　者：田常湘 丁雪萍 刘宇 粟嘉伟 张喆垚 林雪梅 TIAN Chang-xiang;DING Xue-ping;LIU Yu;SU Jia-wei;ZHANG Zhe-yao;LIN Xue-mei(th Research Institute of China Electronics Technology Group Corporation,Chongqing 400060)

机构地区：[1]中国电子科技集团公司第四十四研究所,重庆400060

出　　处：《环境技术》2025年第1期50-57,共8页Environmental Technology

摘　　要：随着FinFET器件在航空航天、核能及军事等高辐射环境中的广泛应用,其在总剂量辐射效应(Total Ionizing Dose,TID)下的性能可靠性成为重要研究课题。本文阐述了FinFET器件的基本原理及其在TID效应下的性能影响,讨论了关于FinFET TID效应的机理分析,总结了目前的模拟模型工具以及加固方法,包括优化材料、改进器件结构和采用电路冗余等策略,以提高FinFET在高辐射环境下的可靠性。未来研究应继续探索新材料和创新结构,以进一步提升FinFET的抗辐射能力,满足极端环境下的应用需求。With the wide application of FinFET devices in high-radiation environments such as aerospace,nuclear energy and military,their performance reliability under the total dose radiation effect(Total Ionizing Dose,TID)has become an important research topic.This article explains the basic principles of FinFET devices and their performance impact under the TID effect,discusses the mechanism analysis of the FinFET TID effect,and summarizes the current simulation model tools and reinforcement methods,including optimizing materials,improving device structures,and using circuit redundancy.Other strategies to improve the reliability of FinFETs in high radiation environments.Future research should continue to explore new materials and in novative structures to further improve the radiation resistance of FinFETs and meet application needs in extreme environments.

关 键 词：FinFET器件 总剂量辐射效应 模拟模型工具 加固方法 

分 类 号：TN386[电子电信—物理电子学]