ITO沉积温度对ITO/Au透明导电薄膜光电性能的影响  

Effect of ITO Deposition Temperature on Photoelectric Properties of ITO/Au Transparent Conductive Films

作　　者：侯焕然 金扬利 石晓飞 张运生 王衍行 祖成奎 HOU Huanran;JIN Yangli;SHI Xiaofei;ZHANG Yunsheng;WANG Yanhang;ZU Chengkui(China Building Materials Academy,Beijing 100024,China)

机构地区：[1]中国建筑材料科学研究总院有限公司,北京100024

出　　处：《表面技术》2025年第4期233-241,261,共10页Surface Technology

摘　　要：目的研究衬底层ITO的沉积温度对ITO/Au透明导电薄膜光电性能的影响规律和机理。方法采用直流磁控溅射技术,在不同沉积温度下制备的ITO薄膜表面沉积超薄Au膜,利用扫描电子显微镜、原子力显微镜、分光光度计、四探针电阻测试仪对ITO/Au薄膜的表面形貌、表面粗糙度、透光率及表面方阻进行表征和测试,分析ITO沉积温度对ITO/Au光电性能的影响机理。为了进一步理解超薄Au膜生长连续性改善的原因,通过几何平均法和算术平均法分别计算了ITO薄膜的表面自由能,分析了ITO薄膜表面自由能的改变对生长形貌的影响规律。结果在超薄Au膜镀制工艺相同的前提下,随着衬底层ITO薄膜沉积温度升高,ITO/Au薄膜的可见光平均透过率提升,表面方阻值降低。这是因为当沉积温度高于200℃时,ITO薄膜发生多晶化转变,多晶态的ITO相较于非结晶态具有更高的表面自由能,更有利于超薄Au膜的铺展,进而提升ITO/Au薄膜的光电性能。当ITO沉积温度提升至300℃时,ITO薄膜的表面自由能几何平均法计算结果为45.2 mJ/m^(2),算术平均法计算结果为48.1 mJ/m^(2),在其表面沉积超薄Au膜后,制备了可见光平均透过率为47.5%、表面方阻为5.65Ω/sq,高光电性能兼容的ITO/Au薄膜。结论提高衬底层ITO薄膜的沉积温度,ITO薄膜发生多晶化转变,表面自由能提升,可有效促进超薄Au膜在其表面铺展,进而提升ITO/Au薄膜的光电性能。With the rapid development of radar detection technology,the electromagnetic shielding stealth of weapons and warplanes is becoming more and more important in modern warfare,especially in guided missiles,weapon pods and other glass surfaces.During the occasions above,the high optical transmittance and strong electromagnetic shielding effectiveness are common technical requirements.The work aims to investigate the effect law and mechanism of deposition temperature of the substrate layer ITO on the photoelectric properties of ITO/Au transparent conductive films,so as to improve the photoelectric properties of ITO/Au films.By employing the direct current magnetron sputtering technology,ultra-thin Au films were deposited on the ITO films prepared at different deposition temperatures(50-300℃).The surface morphology,roughness,transmittance,and surface resistivity of the ITO/Au films were characterized and tested by scanning electron microscopy,atomic force microscopy,spectrophotometry,and a four-point probe resistivity meter.In order to further analyze the surface state of the ITO films,the surface free energy of the ITO films was calculated by geometric-mean method and harmonic-mean method,with ultra-pure water,formamide and diiodomethane as test liquids.The effect mechanism of the ITO film deposition temperature on the photoelectric properties of the ITO/Au films was explained by numerical analysis of the surface free energy of ITO films prepared at different deposition temperatures.It was found that,in the same ultra-thin Au film deposition process,the optoelectronic properties of the ITO/Au films were improved as the deposition temperature of the substrate layer ITO film increased.Meanwhile,the ultra-thin Au film deposited on the surface of the ITO film prepared at a higher deposition temperature had lower roughness and more continuous growth morphology.This was because that when the deposition temperature was higher than 200℃,the ITO film underwent a polycrystalline transformation.The polycrystalline ITO had a

关 键 词：沉积温度 氧化铟锡 超薄金膜 透明导电薄膜 磁控溅射 光电性能 表面自由能 

分 类 号：TB34[一般工业技术—材料科学与工程]