一种互补肖特基势垒源可重置的场效应晶体管  

A Complementary Schottky Barrier Source Reconfigurable FET

作　　者：赵贺 靳晓诗[1] 王冰 ZHAO He;JIN Xiaoshi;WANG Bing(School of Information Science and Engineering,Shenyang University of Technology,Shenyang 110870,China)

机构地区：[1]沈阳工业大学信息科学与工程学院,沈阳110870

出　　处：《微处理机》2025年第1期12-15,共4页Microprocessors

摘　　要：针对器件尺寸微缩导致的短沟道效应和漏电流增加问题,提出一种基于互补肖特基势垒源的可重置场效应晶体管(CSBS-RFET)。研究了该器件在不同栅极电压下的可重置输出电流、能带和载流子浓度分布,并通过Silvaco TCAD仿真验证。实验表明采用无掺杂半导体与Er和Pt金属形成低肖特基势垒的设计可有效提高正向导通电流,同时显著降低关断电流和功耗。该器件在快速信息处理芯片领域具有良好的应用前景。To address the problems of short-channel effects and increased leakage current caused by device size scaling,a Complementary Schottky Barrier Source Reconfigurable Field-Effect Transistor(CSBS-RFET)is proposed.The reconfigurable output current,energy band,and carrier concentration distribution under different gate voltages are investigated and verified through Silvaco TCAD simulation.Experimental results show that the design using undoped semiconductor forming low Schottky barriers with Er and Pt metals can effectively enhance the forward conduction current while significantly reducing the off-state current and power consumption.This device shows promising application prospects in the field of high-speed information processing chips.

关 键 词：肖特基势垒 XNOR逻辑门 可重置场效应晶体管 互补场效应晶体管 

分 类 号：TN386[电子电信—物理电子学]