一种基于互补双掺杂低源漏电阻同或门的场效应晶体管  

A Field-Effect Transistor Based on Complementary Dual-Doped Low Source/Drain Resistance XNOR

作　　者：任国琛 刘溪[1] 王继祥 REN Guochen;LIU Xi;WANG Jixiang(School of Information Science and Engineering,Shenyang University of Technology,Shenyang 110870,China)

机构地区：[1]沈阳工业大学信息科学与工程学院,沈阳110870

出　　处：《微处理机》2025年第1期16-19,共4页Microprocessors

摘　　要：研究提出基于互补双掺杂低源漏电阻同或门的场效应管(CDSD-XNOR)。源极和漏极采用N型和P型区域掺杂形成互补欧姆接触,取代传统双向可重置场效应晶体管(BRFET)的肖特基接触。采用两个栅极分别控制通道的不同部分,以其电压决定所控制沟道的载流子类型。欧姆接触减少了能量损失和热量产生,提高了器件效率和可靠性。采用互补掺杂技术显著提高正向传导电流,降低导通电阻,且在两个栅极分别用作控制栅极时具有更好的传输特性一致性。该器件更适合用作XNOR逻辑门,具有更高的正向导通电流和输入一致性,并实现输入可互换功能。通过Silvaco TCAD仿真验证了各项指标功能。A Field-Effect Transistor based on complementary dual-doped low source/drain resistance XNOR is proposed.The source and drain adopt N-type and P-type region doping to form complementary ohmic contacts,replacing the traditional Schottky contacts in bidirectional RFET.Two gates are used to control different parts of the channel,with their voltages determining the carrier types in their controlled channel regions.Ohmic contacts reduce energy loss and heat generation,improving device efficiency and reliability.The complementary doping technology significantly increases forward conduction current,reduces on-resistance,and achieves better transmission characteristic consistency when the two gates serve as control gates respectively.This device is more suitable for XNOR logic gates,featuring higher forward conduction current,input consistency,and achieving input interchangeability.Various performance indica-tors and functions are verified through Silvaco TCAD simulation.

关 键 词：互补掺杂技术 肖特基势垒 欧姆接触 Silvaco TCAD仿真 

分 类 号：TN386[电子电信—物理电子学]